• Acta Photonica Sinica
  • Vol. 49, Issue 9, 914001 (2020)
Bo LI1, Zhen-fu WANG2、*, Bo-cang QIU2, Guo-wen YANG1, Te LI2, Yu-liang ZHAO1, Yu-xian LIU1, Gang WANG1, and Shao-bo BAI2
Author Affiliations
  • 1State Key Laboratory of Transient Optics and Photonics, Xi''an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi''an 710119, China
  • 2State Key Laboratory of Transient Optics and Photonics, Xi''an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi''an 710119, China
  • show less
    DOI: 10.3788/gzxb20204909.0914001 Cite this Article
    Bo LI, Zhen-fu WANG, Bo-cang QIU, Guo-wen YANG, Te LI, Yu-liang ZHAO, Yu-xian LIU, Gang WANG, Shao-bo BAI. Influence of Strain on Performance of Independent Emitters in High Power Quasi-continuous Semiconductor Laser Array[J]. Acta Photonica Sinica, 2020, 49(9): 914001 Copy Citation Text show less
    References

    [1] Li-jie WANG, Cun-zhu TONG, Shi-li SHU. Loss tailoring of high-power broad-area diode lasers. Optics Letters, 44, 3562(2019).

    [2] C X YU, O SHATROVOY, T Y FAN. Diode-pumped narrow linewidth multi-kilowatt metalized Yb fiber amplifier. Optics Letters, 41, 5202(2016).

    [3] D H WU, C E ZAH, X S LIU. Three-dimensional thermal model of high-power semiconductor lasers. Applied Optics, 58, 3892-3901(2019).

    [4] J W TOMM, A GERHARDT, T ELSAESSER. Simultaneous quantification of strain and defects in high-power diode laser devices. Applied Physics Letters, 81, 3269(2002).

    [5] D S KIM, C HOLLOWAY, B HAN. Method for predicting junction temperature distribution in a high-power laser diode bar. Applied Optics, 55, 7487-7496(2016).

    [6] MATTHEW P, VICT R, ERIK Z. Highpower highefficiency laser diodes at JDSU[C]. Proceedings of SPIEThe International Society f Optical Engineering, 2007, 6456(5): 12171222.

    [7] Zhen-fu WANG, Te LI, Guo-wen YANG. High power, high efficiency continuous-wave 808 nm laser diode arrays. Optics & Laser Technology, 97, 297-301(2017).

    [8] F MAHLER, R KERNKE, J W TOMM. By-emitter analysis of 450-nm emitting high-power diode laser bars. IEEE Journal of Selected Topics in Quantum Electronics, 25, 1-6(2019).

    [9] S BULL, J J LIM, C K AMUZUVI. Emulation of the operation and degradation of high-power laser bars using simulation tools. Semiconductor Science and Technology, 27, 137-143(2012).

    [10] A MARTIN-MARTIN, M AVELLA, M P INIGUEZ. Thermomechanical model for the plastic deformation in high power laser diodes during operation. Journal of Applied Physics, 106, 073105(2009).

    [11] Jun-yu FANG, He ZHANG, Yong-gang ZOU. Thermal management of a semiconductor laser array based on a graphite heat sink. Applied Optics, 58, 7708-7715(2019).

    [13] Zhi-qiang NIE, Yao LU, Tian-qi CHEN. Thermomechanical behavior of conduction-cooled high-power diode laser arrays. IEEE Transactions on Components Packaging & Manufacturing Technology, 8, 818-829(2018).

    [14] R XIA, E C LARKINS, I HARRISON. Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars. IEEE Photonics Technology Letters, 14, 893-895(2002).

    [15] D T CASSIDY, O REHIOUI, C K HALL. High-power diode laser bars and shear strain. Optics Letters, 38, 1633(2013).

    [16] Hong-you ZHANG, Tuan-wei FU, Chung-en ZHA. Easy method to measure the packaging-induced stress of a semiconductor laser diode by lasing wavelength shifting. Applied Optics, 58, 6672(2019).

    [18] J W TOMM, T Q TIEN, D T CASSIDY. Spectroscopic strain measurement methodology:degree-of-polarization photoluminescence versus photocurrent spectroscopy. Applied Physics Letters, 88, 133504(2006).

    [19] S TRIPATHY, S J CHUA, P CHEN. Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si (111). Journal of Applied Physics, 92, 3503-3510(2002).

    [20] S BULL, A V ANDRIANOV, I HARRISON. A spectroscopically resolved photo-and electroluminescence microscopy technique for the study of high-power and high-brightness laser diodes. IEEE Transactions on Instrumentation & Measurement, 54, 1079-1088(2005).

    [21] M HEMPEL, M ZIEGLER, S SCHWIRZKE-SCHAAF. Spectroscopic analysis of packaging concepts for high-power diode laser bars. Applied Physics A, 107, 371-377(2012).

    [22] T KAUL, G ERBERT, A MAABDORF. Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs. Semiconductor Science and Technology, 33, 1-9(2018).

    [23] R M WOOD, D SAHA, A L MCCARTHY. Effects of strain and quantum confinement in optically pumped nuclear magnetic resonance in GaAs:Interpretation guided by spin-dependent band structure calculations. Physical Review B, 90, 155317(2014).

    [24] Hui ZHU, Kun LIU, Cong XIONG. The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes. Microelectronics Reliability, 55, 62-65(2015).

    [25] HOSTETLER J L, JIANG C L, NEGOITA V, et al. Thermal strain acteristics of high power 940 nm laser arrays mounted with AuSn In solders[C]. SPIE, 2007, 6456: 645602.

    [26] I VURGAFTMAN, J R MEYER, L R RAM-MOHAN. Band parameters for Ⅲ-Ⅴ compound semiconductors and their alloys. Journal of Applied Physics, 89, 5815-5875(2001).

    [28] H M HU, Jian-yang ZHAO, Wei-min WANG. 12 W high power InGaAsP/AlGaInP 755 nm quantum well laser. Chinese Optics Letters, 17, 49-53(2019).

    [29] M A FRITZ, D T CASSIDY. Extraction of bonding strain data in diode lasers from polarization-resolved photoluminescence measurements. Microelectronics Reliability, 44, 787-796(2004).

    [31] YUAN Zhenbang, WANG Jingwei, WU Di, et al. Study of steady transient thermal behavi of high power semiconduct lasers[C]. 200959th Electronic Components Technology Conference, 2009, 36(8): 831836.

    [32] C K AMUZUVI, S BULL, J W TOMM. The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars. Applied Physics Letters, 98, 241108(2011).

    Bo LI, Zhen-fu WANG, Bo-cang QIU, Guo-wen YANG, Te LI, Yu-liang ZHAO, Yu-xian LIU, Gang WANG, Shao-bo BAI. Influence of Strain on Performance of Independent Emitters in High Power Quasi-continuous Semiconductor Laser Array[J]. Acta Photonica Sinica, 2020, 49(9): 914001
    Download Citation