Bo LI, Zhen-fu WANG, Bo-cang QIU, Guo-wen YANG, Te LI, Yu-liang ZHAO, Yu-xian LIU, Gang WANG, Shao-bo BAI. Influence of Strain on Performance of Independent Emitters in High Power Quasi-continuous Semiconductor Laser Array[J]. Acta Photonica Sinica, 2020, 49(9): 914001
- Acta Photonica Sinica
- Vol. 49, Issue 9, 914001 (2020)
Fig. 1. The schematic diagram of the external and epitaxial structure of the high-peak power semiconductor laser array device
Fig. 2. Test curve and near field spot of high peak power semiconductor laser array
Fig. 3. The experiment setup
Fig. 4. Wavelength and corresponding external strain at each emitter position
Fig. 5. Wavelength and spectrum at each emitter position in the array under given test conditions
Fig. 6. Wavelength shift caused by temperature change and power at each emitter position in the array
Fig. 7. Slope efficiency and normalized threshold current at each emitter position under 10% (500 μ s, 200 Hz) duty cycle
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Table 1. Performance parameter values of the device
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