• Laser & Optoelectronics Progress
  • Vol. 49, Issue 10, 102302 (2012)
Wu Yanyan*, Feng Shiwei, Zhou Zhou, and Wei Guanghua
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/lop49.102302 Cite this Article Set citation alerts
    Wu Yanyan, Feng Shiwei, Zhou Zhou, Wei Guanghua. Failure Mechanism of Phosphor Layer for High-Power GaN-Based White-LED[J]. Laser & Optoelectronics Progress, 2012, 49(10): 102302 Copy Citation Text show less
    References

    [1] Qian Keyuan, Liu Hongtao, Ji Chunshao. Analysis of the degradation of high power light emitting diode [J]. Semiconductor Optoelectronics, 2011, 32(3): 331~335

    [2] N. Narendran, Y. Gu. Life of LED-based white light sources[J]. J. Display Technol., 2005, 1(1): 167~171

    [3] M. Pavesi, M. Manfredi. Optical evidence of an electrothermal degradation of InGaN-based light emitting diodes during electrical stress [J]. Appl. Phys. Lett., 2004, 84(17): 3403~3405

    [4] Wu Fan. Reliability and Failure Analysis of the High Power Blue LED [D]. Wuhan: Huazhong University of Science and Technology, 2007. 25~44

    [5] Wang Lu. Mechanisms Analysis of Light-Emitting Diodes [D]. Beijing: Beijing University of Technology, 2010. 51~52

    [6] Bai Shengmao, Wang Jing, Miao Hongli et al.. Luminescence properties of the Y3-x-yPrxGdyAl5O12Ce3+ phosphors for white light emitting diodes[J]. Acta Optica Sinica, 2010, 30(5): 1402~1405

    [7] Lei Yong, Fan Guanghan, Liao Changjun et al.. Research on the thermal property of powerful white LEDs [J]. J. Optoelectronics·Laser, 2006, 17(8): 945~946

    [8] Wu Haibin, He Sumei, Wang Changling. Experimental research on the meehanism of causing fast luminous attenuation of white lamp-LED [J]. Acta Optica Sinica, 2009, 29(5): 1363~1367

    [9] B. Yan, N. T. Tran, J. P. You et al.. Can junction temperature alone characterize thermal performance of white LED emitters [C]. IEEE Photon. Technol. Lett., 2011, 23(9): 555~557

    [10] Wu Qibao, Qing Shuanggui, Xiong Tao et al.. The preparation and characteration of organic silicone encapsulant [J]. Guangdong Chemical Industry, 2009, 36(2): 23~25

    [11] Liu Hao. Reliability Research on the Package of High Power LED [D]. Wuhan: Huazhong University of Science and Technology, 2007. 21~33

    [12] Zhang Peng, Chen Yiyu. Study of failure mechanism and evaluation method for plastic encapsulated microelectronics devices [J]. Package & Test Technology, 2006, 31(9): 676~677

    [13] J. C. Huang, R. D. Deanin, Y. P. Chu et al.. Comparison of epoxy resins for applications in light-emitting diodes [J]. Adv. Polym. Technol., 2004, 23(4): 298~306

    [14] Liu Junlin, Qiu Chong, Jiang Fengyi. Research of passivation and anti reflecting layer on GaN based blue LED on silicon substrate[J]. Acta Optica Sinica, 2010, 30(10): 2978~2982

    CLP Journals

    [1] Sun Haigang, Miao Hongli, Li Guoqiang. Influence of Photocuring Time on the Optical Properties of White LED[J]. Laser & Optoelectronics Progress, 2014, 51(5): 52301

    Wu Yanyan, Feng Shiwei, Zhou Zhou, Wei Guanghua. Failure Mechanism of Phosphor Layer for High-Power GaN-Based White-LED[J]. Laser & Optoelectronics Progress, 2012, 49(10): 102302
    Download Citation