The influence of the key process parameters of CH4/H2/Cl2 inductively coupled plasma (ICP) on the etching performance was systematically investigated. The flow density and the ratio in CH4/H2/Cl2 gas mixtures are optimized. Therefore, an effective method can be used for fabricating Bragg grating with high etching rate, low damage ICP etching and high quality surface on special designed InP/InGaAlAs multiple quantum well wafer. Combined with post-process, four wavelengths 1.3 μm distributed feedback laser array was fabricated based on multi-period λ/4 shifted Bragg grating. The typical threshold current and the external differential efficiency are about 11 mA and 0.40 W/A, respectively. And the side mode suppression ratio of each laser diode is more than 46 dB. It can be verified that ICP etching processing in Bragg grating has high quality and reliability.