• Acta Optica Sinica
  • Vol. 19, Issue 1, 132 (1999)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Spectroscopy and Laser Performance of Yb3+ Doped YAG Crystal[J]. Acta Optica Sinica, 1999, 19(1): 132 Copy Citation Text show less

    Abstract

    Spectral performances of Yb:YAG crystal were studied. The optimal Yb3+ doping level in Yb:YAG crystal is 10at%, which is determined by the fluorescence lifetime measurement. It is shown that the cooperative up-conversion processes of Yb3+→Tm3+ energy transfer is responsible for the fluorescence quenching at high Yb3+ doping level. 300 mW of pulsed laser output power at 1030 nm was obtained by means of InGaAs LD pumped 20at% Yb:YAG crystal thin chip.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Spectroscopy and Laser Performance of Yb3+ Doped YAG Crystal[J]. Acta Optica Sinica, 1999, 19(1): 132
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