DEDUCING THE PROPERTIES OF CdZnTe WAFERS BY IR TRANSMISSION

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 22 >Issue 6 >Page 469 > Article

Journal of Infrared and Millimeter Waves
Vol. 22, Issue 6, 469 (2003)

DEDUCING THE PROPERTIES OF CdZnTe WAFERS BY IR TRANSMISSION

[in Chinese], [in Chinese], and [in Chinese]

Author Affiliations

[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. DEDUCING THE PROPERTIES OF CdZnTe WAFERS BY IR TRANSMISSION[J]. Journal of Infrared and Millimeter Waves, 2003, 22(6): 469 Copy Citation Text

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References

[1] Doty F P, Butler L F, Apotovsky B. Gamma-and X-ray detectors manufactured from CZT grown by a high pressure Bridgman method. Mater. Sci. Eng., 1993, B16: 291-295

[2] Fiederle M, Feltgen T, Meinhardt J, et al. State of the art of CdZnTe as gamma detectors. J. Cryst. Growth, 1999, 197: 635-640

[3] Schieber M, Schlesinger T E, James R B, et al. Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals. J. Cryst. Growth, 2002, 239: 2082-2090

[4] Sanaghamitra S, David R, Charles R, et al. Extraction of mobile impurities from CdZnTe. J. Electron. Mater., 2000, 29: 775-780

[8] Yoon H, Lindo S E, Goorsky M S. Characterization of ternary substrate materials using triple axis X-ray diffraction. J. Cryst. Growth, 1997, 174: 775-782

CLP Journals

[1] Xu Yadong, Jie Wanqi, Zha Gangqiang, Gao Junning, Wang Tao, Fu li, Paul Sellin. A Study on the Low Energy X/γ-ray Spectral Response of CdZnTe Planar Detectors[J]. Acta Optica Sinica, 2009, 29(11): 3072

[in Chinese], [in Chinese], [in Chinese]. DEDUCING THE PROPERTIES OF CdZnTe WAFERS BY IR TRANSMISSION[J]. Journal of Infrared and Millimeter Waves, 2003, 22(6): 469

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