• Infrared Technology
  • Vol. 42, Issue 11, 1077 (2020)
Qiaofang WANG1、2、*, Wanxiang ZHENG1, Chongwen WANG2, Jian LIU2, Rui LUO1、2, and Yuanrong ZHAO2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    WANG Qiaofang, ZHENG Wanxiang, WANG Chongwen, LIU Jian, LUO Rui, ZHAO Yuanrong. Preliminary Study on Storage Life Distribution of Semiconductor Device Based on Weibull Distribution[J]. Infrared Technology, 2020, 42(11): 1077 Copy Citation Text show less

    Abstract

    In this study, a semiconductor device was tested for high temperature storage at 90℃, 80℃ and 70℃, and the failure data is obtained. Based on the Weibull distribution model, parameter estimation was carried out by the least square method. The failure distribution function of the semiconductor device was obtained. And the classical reliability theory was applied to calculate the characteristic life, reliable life and MTBF of the product at 90℃, 80℃ and 70℃. Using the Arrhenius model, the storage characteristic life of the semiconductor device at room temperature was obtained, according to the storage characteristic life of 90℃, 80℃ and 70℃. The results show that the method is reasonable, simple and effective, and the results can be used to derive the normal temperature storage life.
    WANG Qiaofang, ZHENG Wanxiang, WANG Chongwen, LIU Jian, LUO Rui, ZHAO Yuanrong. Preliminary Study on Storage Life Distribution of Semiconductor Device Based on Weibull Distribution[J]. Infrared Technology, 2020, 42(11): 1077
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