Fabrication and characterization of back-illuminated GaN/A1GaN p-i-n UV detectors with high performance

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 36 >Issue 6 >Page 928 > Article

Infrared and Laser Engineering
Vol. 36, Issue 6, 928 (2007)

Fabrication and characterization of back-illuminated GaN/A1GaN p-i-n UV detectors with high performance

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]¹, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication and characterization of back-illuminated GaN/A1GaN p-i-n UV detectors with high performance[J]. Infrared and Laser Engineering, 2007, 36(6): 928 Copy Citation Text

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Abstract

作者简介：龚海梅(1965-),男,江苏宿迁人,研究员,博士,主要从事航天遥感红外光电传感器的研制,以及红外、紫外焦平面等新型探测器组件及其抗辐射机理与可靠性技术研究.Email:ghmhxnk@online.sh.cn

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