[1] Hoogeveen RW M, van derA R J, GoedeA PH. Extended wavelength InGaAs infrared (1. 0~2. 4μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere [J].Infrared Physics & Technology, 2001,42(1): 1—16.
[3] Cordier Y, FerreD, Chauveau J-M,etal.Surfacemorphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps[J].Applied Surface Science,2000,166(1-4): 442—445.
[4] LingaK R, OlsenGH, BanV S,etal.Dark currentanalysis and characterization of InGaAs/ InAsP graded photodiodeswith x > 0.53 for response to longerwavelength (>1.7 μm) [J].Journal ofLightwave Technology,1992,10(8): 1050—1055.
[5] Wada O, Nobuhara H, Hamaguchi H,et al.Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice[J].Applied PhysicsLetters,1989,54(1): 16—17.
[6] ZhangY G, Gu Y, Tian Z B,et al.Wavelength extended 2. 4μm heterojunction InGaAs photodiodeswith InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations [J].Infrared Physics & Technology, 2008,51(4): 316—321.
[7] ForrestSR, Kim O K, SmithR G. Optical response time of In0.5Ga0.47As/InP avalanche photodiodes[J].Applied Physics Letters,1982,41(1): 95—98.
[8] Wel P J, Nijenhuis J, Eck E RH,etal.High-spatial-resolution photoluminescence studies on misfit dislocations in lattice-mismatched III-V heterostructures[J].Semiconductor Science Technology,1992,7(1A):A63—68.
[9] D’HondtM, Moerman I, Demeester P. Dark current optimization forMOVPE grown 2. 5μm wavelength InGaAs photodetectors[J].Electronics Letters,1998,34(9): 910—912.
