• Journal of Infrared and Millimeter Waves
  • Vol. 37, Issue 6, 688 (2018)
ZHANG Ao, ZHANG Yi-Xin, WANG Bo-Ran, and GAO Jian-Jun*
Author Affiliations
  • [in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2018.06.009 Cite this Article
    ZHANG Ao, ZHANG Yi-Xin, WANG Bo-Ran, GAO Jian-Jun. An approach to determine small-signal model parameters for InP HBT up to 110 GHz[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 688 Copy Citation Text show less
    References

    [1] Gao J. Heterojunction bipolar transistor for circuit design—Microwave modeling and parameter extraction[M]. Singapore: Wiley, 2015.

    [2] McMacken J, Nedeljkovic S, Gering J, et al. HBT modeling [J]. IEEE Microwave Magazine, 2008, 9(2): 48-71.

    [3] Johansen T K, Leblanc R, Poulain J, et al. Direct extraction of InP/GaAsSb/InP DHBT equivalent-circuit elements from S-parameters measured at cut-off and normal bias conditions[J]. IEEE Trans.Microw.Theory Techn., 2016, 64(1):115-123.

    [4] Gao J, Li X, Wang H., et al. An improved analytical method for determination of small signal equivalent circuit model parameters for InP/InGaAs HBTs[J]. IEE Proceedings -Circuit, Device and System, 2005, 152(6): 661-666.

    [5] Sotoodeh M, Sozzi L, Vinay A, et al. Stepping toward standard methods of small-signal parameter extraction for HBT’s[J]. IEEE Trans. Microwave Theory Tech., 2000, 47:1139-1151.

    [6] Wei C J, Huang C M. Direct extraction of equivalent circuit parameters for heterojunction bipolar transistor[J]. IEEE Trans. Microwave Theory Tech., 1995, 43:2035-2039.

    [7] Wang H, Ng G I, Zheng H, et al. Demonstration of aluminumfree metamorphic InP/In0.53Ga0.47As/ InP double heterojunction bipolar transistors on GaAs substrates[J]. IEEE Electron Device Letter, 2000, 21(9):379-381.

    [8] Yang H, Wang H, Radhakrishnan K. Thermal resistance of metamorphic InP-Based HBTs on GaAs substrates using a linearly graded InxGa1-xP metamorphic buffer[J]. IEEE Trans. Electron Devices, 2004,51(8):1221-1227.

    ZHANG Ao, ZHANG Yi-Xin, WANG Bo-Ran, GAO Jian-Jun. An approach to determine small-signal model parameters for InP HBT up to 110 GHz[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 688
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