• Infrared and Laser Engineering
  • Vol. 48, Issue 10, 1017002 (2019)
Cheng Wei1、2, Shi Feng1、2, Yang Shuning1、2, Zhou Yujian1、2, and Ren Bin1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/irla201948.1017002 Cite this Article
    Cheng Wei, Shi Feng, Yang Shuning, Zhou Yujian, Ren Bin. In situ temperature programmed desorption of Ⅲ-nitride photocathode[J]. Infrared and Laser Engineering, 2019, 48(10): 1017002 Copy Citation Text show less

    Abstract

    Theoretical thermal desorption and in situ temperature programmed desorption(TPD) were developed to study the degassing of contaminants adsorbed in III-nitride photocathodes assembly. In the frame of Malev′sadsorption-diffusion outgassing theory, one dimensional slab was used to model the photocathodes assembly. By using the first and the second Fick′slaw, the expressions of the special gas concentration, the specific gas outgassing rate and the amount of degased specific gas over the time in the degassing process were obtained. To make it more intuitional, these parameters were ploted over time within different diffusion coefficient magnitude at the approximation of fourth order. In the TPD method for III-nitride photocathodes assembly, residual gas mass spectrum was thoroughly studiedat different constant temperature stage to determine which gases were desorbed into the vacuum. The least square method was employed to fit the expression of the specific outgassing rate at the constant temperature of 1 000 K, and the diffusion coefficient D for outgassing N2 was 5×10-5 cm2/s in the dynamic method of degassing process. By combining theoretical analysis with TPD experiments, the heating up temperature for sufficient outgassing the contaminants from the III-nitride photocathodes assembly was evaluated and verified.
    Cheng Wei, Shi Feng, Yang Shuning, Zhou Yujian, Ren Bin. In situ temperature programmed desorption of Ⅲ-nitride photocathode[J]. Infrared and Laser Engineering, 2019, 48(10): 1017002
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