[2] STRITES,MORKOQH.GaN,AlN and InN;a review[J].J Vac Sd Technol,1992,B,10(4):1237-1266.
[3] OHONO H.Making nonmagnetic semiconductors ferromagnetic[J].Science,1998,281:951-956.
[5] LIU C,ALVES E,RAMOS A R,et al.Lattice location and annealing behavior of Mn implanted GaN[J].Nuclear Instruments & Methods in Physics Research Section B,2002,191:544-548.
[6] DIETL T,OHNO H,MATSUKURA F,et al.Zener model description of ferromagnetism in zinc-blende magnetic semiconductors[J].Science,2000,287:1019-1022.
[7] KAZUNORI S,HIROSHI K.Material design of GaN-based ferromagnetic diluted magnetic semiconductors[J].Jpn J Appl Phys,2001,40:L485-L487.
[13] YOSHIDA S,MISAWA S,GONDA S.Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates[J].Appl Phys Lett,1983,42(5):427-429.
[14] NAKAMURA S.GaN growth using GaN buffer layer[J].Jpn J Appl Phys,1991,30:L1705-L1707.
[15] GU Biao,XU Yin,QIN Fu-wen,et al.Low temperature growth of c-GaN on GaAs substrate[J].Chinese J Rare Metals,1998,22:143-145.