Nitriding of α-Al2O3 substrates in GaN films growth

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 36 >Issue 5 >Page 721 > Article

Infrared and Laser Engineering
Vol. 36, Issue 5, 721 (2007)

Nitriding of α-Al2O3 substrates in GaN films growth

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Nitriding of α-Al2O3 substrates in GaN films growth[J]. Infrared and Laser Engineering, 2007, 36(5): 721 Copy Citation Text

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Abstract

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Nitriding of α-Al2O3 substrates in GaN films growth[J]. Infrared and Laser Engineering, 2007, 36(5): 721

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