Fuqiang ZHANG, Qiming CHEN, Yihao GONG, Shuyan XIAO, Zheng ZHANG, Xu MA, Shuyong ZHAO, Hongchao ZHENG, Jianpeng ZHANG, Gang GUO. Impact of different parameters on the static random access memory under the total ionizing dose[J]. Journal of Radiation Research and Radiation Processing, 2023, 41(6): 060703
Journals >Journal of Radiation Research and Radiation Processing >Volume 41 >Issue 6 >Page 060703 > Article
- Journal of Radiation Research and Radiation Processing
- Vol. 41, Issue 6, 060703 (2023)
Fig. 1. Picture of the device under 60Co irradiation
Fig. 2. Statical power current of the SRAM under different total doses and dose rates: (a) 180 nm; (b) 65 nm
Fig. 3. (a) Statical power current of the 28 nm SRAM under different total doses and dose rates; (b) increasment ratio of the device under different doses
Fig. 4. Dynamic current of the 28 nm SRAM with and without the radiation
Fig. 5. Influence of the temperature on the TID
Fig. 6. Typical dose rate and the nonuniformity of the source (color online)
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