• Acta Optica Sinica
  • Vol. 30, Issue 10, 2978 (2010)
Liu Junlin1、2、*, Qiu Chong2, and Jiang Fengyi1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/aos20103010.2978 Cite this Article Set citation alerts
    Liu Junlin, Qiu Chong, Jiang Fengyi. Research of Passivation and Anti Reflecting Layer on GaN Based Blue LED on Silicon Substrate[J]. Acta Optica Sinica, 2010, 30(10): 2978 Copy Citation Text show less
    References

    [1] Kuang Hai, Liu Junlin, Cheng Haiying et al.. Effect of transferred submount materials on properties of GaN-based LED chips grown on Si substrate[J]. Acta Optica Sinica, 2008, 28(1): 143~145

    [2] Shi Lingna, Huang Shanglian, Sun Jiyong et al.. Optical performance analysis and experiment of grating light modulator with LED light source[J]. Acta Optica Sinica, 2008, 28(11): 2225~2231

    [3] Zongyou Yin, Densen Cao, Jingzhi Yin et al.. Fabrication of blue LEDs on big chips[J]. Chin. Opt. Lett., 2003, 1(4): 220~221

    [4] Wu Haibin, Wang Changling, He Sumei. Research of color rendering of white LED based on red and green phosphors[J]. Acta Optica Sinica, 2008, 28(9): 1777~1782

    [5] Soonjin So, Choonbae Park. Improvement of brightness with Al2O3 passivation layers on the surface of InGaN/GaN-based light-emitting diode chips[J]. Thin Solid Films, 2008, 516(8): 2031~2034

    [6] Guangdi Shen, Xiaoli Da, Xia Guo et al.. Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes[J]. J. Luminesce., 2007, 127(2): 441~445

    [7] Xiaoli Da, Xia Guo, Limin Dong et al.. The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes[J]. Solid-State Electronics, 2006, 50(3): 508~510

    [8] Yanxu Zhu, Chen Xu, Xiaoli Da et al.. GaN-based light-emitting diodes with SiONx on sidewalls[J]. Semiconductor Science and Technology, 2007, 22(6): 659~662

    [9] Da Xiaoli, Shen Guangdi, Xu Chen et al.. Study on enhancement of light output power for GaN based LED by coating passivation layers[J]. Research & Progress of SSE, 2007, 27(4): 558~561

    [10] Mo Chunlan, Fang Wenqing, Liu Hechu et al.. Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD[J]. Crystal Growth, 2005, 28(5): 312~316

    [11] G. Meneghesso, S. Levada, E. Zanoni et al.. Reliability of visible GaN LEDs in plastic package[J]. Microelectronics Reliability, 2003, 43(9~11): 1737~1742

    [12] Zhou Liyin, He Ying, Zhang Wenfei et al.. Development of epoxy/epoxy-silsesquioxane hybrid material for LED packaging[J]. Engineering Plastics Application, 2009, 37(3): 5~8

    [13] M. Meneghini, L. Trevisanello, C. Sanna et al.. High temperature electro-optical degradation of InGaN/GaN HBLEDs[J]. Microelectronics Reliability, 2007, 47(9~11): 1625~1629

    [14] Lin Liang, Chen Zhizhong, Chen Ting et al.. Characteristics of the accelerated aging white LEDs[J]. Chin. J. Luminesc, 2005, 26(5): 617~621

    [15] Z. Q. Fang, D. C. Reynolds, D. C. Look. Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes[J]. J. Electron. Mater., 2000, 29(4): 448~450

    [16] X. A. Cao, P. M. Sandvik, S. F. LeBoeuf et al.. Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses[J]. Microelectronics Reliability, 2003, 43(12): 1987~1991

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    [4] Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Research on Efficiency Improvement of InGaN Light-Emitting Diodes with InGaN/GaN Superlattice Barrier[J]. Laser & Optoelectronics Progress, 2014, 51(3): 32301

    [5] Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Study on the Growth of InGaN/GaN Multiple Quantum Wells on GaN {11-22} Semipolar Plane[J]. Laser & Optoelectronics Progress, 2014, 51(2): 22302

    Liu Junlin, Qiu Chong, Jiang Fengyi. Research of Passivation and Anti Reflecting Layer on GaN Based Blue LED on Silicon Substrate[J]. Acta Optica Sinica, 2010, 30(10): 2978
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