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    Journals >Journal of Inorganic Materials >Volume 39 >Issue 10 >Page 1159 > Article
    • Journal of Inorganic Materials
    • Vol. 39, Issue 10, 1159 (2024)
    Optimization of Thermoelectric Properties of SnTe via Multi-element Doping
    Haojian SU1,2, Min ZHOU1,*, and Laifeng LI1
    Author Affiliations
  • 11. Key Laboratory of Cryogenic Science and Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
  • 22. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.15541/jim20240062 Cite this Article
    Haojian SU, Min ZHOU, Laifeng LI. Optimization of Thermoelectric Properties of SnTe via Multi-element Doping [J]. Journal of Inorganic Materials, 2024, 39(10): 1159 Copy Citation Text show less
    Schematic diagrams of preparative principles
    1. Schematic diagrams of preparative principles
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    XRD patterns of Sn0.70Ge0.15Pb0.15Te1-2xSexSx (x=0.05, 0.07, 0.10) samples
    2. XRD patterns of Sn0.70Ge0.15Pb0.15Te1-2xSexSx (x=0.05, 0.07, 0.10) samples
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    SEM images (a-c) and EDS spectra (d-e) of Sn0.70Ge0.15Pb0.15Te0.80Se0.10S0.10
    3. SEM images (a-c) and EDS spectra (d-e) of Sn0.70Ge0.15Pb0.15Te0.80Se0.10S0.10
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    Relationship of entropy change (∆S) and x in Sn0.70Ge0.15Pb0.15Te1-2xSexSx
    4. Relationship of entropy change (∆S) and x in Sn0.70Ge0.15Pb0.15Te1-2xSexSx
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    Electrical transport performance for bulk SnTe, Sn0.85Ge0.15Te, Sn0.70Ge0.15Pb0.15Te and Sn0.70Ge0.15Pb0.15Te1-2xSexSx (x=0.05, 0.07, 0.10) samples
    5. Electrical transport performance for bulk SnTe, Sn0.85Ge0.15Te, Sn0.70Ge0.15Pb0.15Te and Sn0.70Ge0.15Pb0.15Te1-2xSexSx (x=0.05, 0.07, 0.10) samples
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    Thermal transport performance for bulk SnTe, Sn0.85Ge0.15Te, Sn0.70Ge0.15Pb0.15Te and Sn0.70Ge0.15Pb0.15Te1-2xSexSx (x=0.05, 0.07, 0.10) samples
    6. Thermal transport performance for bulk SnTe, Sn0.85Ge0.15Te, Sn0.70Ge0.15Pb0.15Te and Sn0.70Ge0.15Pb0.15Te1-2xSexSx (x=0.05, 0.07, 0.10) samples
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    Microstructure of the sample Sn0.70Ge0.15Pb0.15Te0.80Se0.10S0.10
    7. Microstructure of the sample Sn0.70Ge0.15Pb0.15Te0.80Se0.10S0.10
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    Temperature dependence of ZT for bulk SnTe, Sn0.85Ge0.15Te, Sn0.70Ge0.15Pb0.15Te, Sn0.70Ge0.15Pb0.15Te1-2xSexSx (x=0.05, 0.07, 0.10), and samples in literature[32-33]
    8. Temperature dependence of ZT for bulk SnTe, Sn0.85Ge0.15Te, Sn0.70Ge0.15Pb0.15Te, Sn0.70Ge0.15Pb0.15Te1-2xSexSx (x=0.05, 0.07, 0.10), and samples in literature[32-33]
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    Abstract
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    References (33)
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    Haojian SU, Min ZHOU, Laifeng LI. Optimization of Thermoelectric Properties of SnTe via Multi-element Doping [J]. Journal of Inorganic Materials, 2024, 39(10): 1159
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