Measurement of minority carrier lifetime in silicon by high speed terahertz detector

Zhang Zhao; Chen Xieyu; Tian Zhen

doi:10.3788/irla201948.0919003

[1] Reed G T, Mashanovich G, Gardes F Y, et al. Silicon optical modulators [J]. Nature Photonics, 2010, 4(8): 518-526.

[2] Peng F, Su Y, Zhong Y, et al. Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy [J]. Accounts of Chemical Research, 2014, 47(2): 612-623.

[3] Soref R. Silicon photonics: a review of recent literature [J]. Silicon, 2010, 2(1): 1-6.

[4] Goodman A M. A method for the measurement of short minority carrier diffusion lengths in semiconductors [J]. Journal of Applied Physics, 1961, 32(12): 2550-2552.

[5] Bruno C J, Martnez Bogado M G, Plá J C, et al. Determination of the minority carrier lifetime in solar cells: a novel biased OCVD technique [J]. Physica Status Solidi A, 1999, 174(1): 231-238.

[6] Isenberg J, Riepe S, Glunz S W, et al. Carrier density imaging (CDI): a spatially resolved lifetime measurement suitable for in-line process-control [C]//29th IEEE Photovoltaic Specialists Conference (PVSC), 2002: 266-269.

[7] Isenberg J, Riepe S, Glunz S W, et al. Imaging method for laterally resolved measurement of minority carrier densities and lifetimes: Measurement principle and first applications [J]. Journal of Applied Physics, 2003, 93(7): 4268-4275.

[8] George P A, Strait J, Dawlaty J, et al. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene [J]. Nano Letters, 2008, 8(12): 4248-4251.

[9] Kar S, Su Y, Nair R, et al. Probing photoexcited carriers in a few-layer MoS2 laminate by time-resolved optical pump-terahertz probe spectroscopy [J]. ACS Nano, 2015, 9(12): 12004-12010.

[10] Parkinson P, Dodson C, Joyce H J, et al. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires [J]. Nano Letters, 2012, 12(9): 4600-4604.

[11] Strait J H, Wang H, Shivaraman S, et al. Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy [J]. Nano Letters, 2011, 11(11): 4902-4906.

[12] Magusara V K, Funkner S, Niehues G, et al. Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy [J]. Optics Express, 2016, 24(23): 26175-26185.

[13] Beard M C, Turner G M, Schmuttenmaer C A. Sub-picosecond carrier dynamics in low-temperaturegrown GaAs as measured by time-resolved THz spectroscopy [J]. Journal of Applied Physics, 2001, 90(12): 5915-5923.

[14] Neu J, Rahm M. Terahertz time domain spectroscopy for carrier lifetime mapping in the picosecond to microsecond regime [J]. Optics Express, 2015: 23(10): 12900-12909.

[15] Underwood D F, Kippeny T, Rosenthal S J. Ultrafast carrier dynamics in CdSe nanocrystals determined by femtosecond fluorescence upconversion spectroscopy [J]. Journal of Physical Chemistry B, 2001, 105(2): 436-443.

[16] Ramanathan S, Patibandla S, Bandyopadhyay S, et al. Fluorescence spectroscopy of electrochemically self-assembled ZnSe and Mn:ZnSe nanowires [J]. Nanotechnology, 2008, 19(19): 195601.

[17] Yao G, Lu L, Gui M, et al. Investigation of ultrafast dynamics of CdTe quantum dots by femtosecond fluorescence up-conversion spectroscopy [J]. Chinese Physics B, 2012, 21(10): 107801.