• Acta Optica Sinica
  • Vol. 43, Issue 19, 1936001 (2023)
Xiaoran Li1、2、*, Yiwen Chen1、2, Mojie Xie1、2, and Jiaoling Zhao2、3
Author Affiliations
  • 1School of Microelectronics, Shanghai University, Shanghai 200072, China
  • 2Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 3Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    DOI: 10.3788/AOS231172 Cite this Article Set citation alerts
    Xiaoran Li, Yiwen Chen, Mojie Xie, Jiaoling Zhao. Freestanding Silicon Thin-Film Filters with High Transmission in Extreme Ultraviolet Range[J]. Acta Optica Sinica, 2023, 43(19): 1936001 Copy Citation Text show less
    A sample of 50 nm-thin freestanding Si filter: a flat surface without folding
    Fig. 1. A sample of 50 nm-thin freestanding Si filter: a flat surface without folding
    Measurement results of thickness. (a) XRR measurement and fitting curves of Si thin film; (b) cross-section SEM image of Si filter
    Fig. 2. Measurement results of thickness. (a) XRR measurement and fitting curves of Si thin film; (b) cross-section SEM image of Si filter
    Measured transmission values and theoretical calculation values ("cal.1") for 50 nm-thin freestanding Si filter in 10-20 nm band, where a transmission value as high as 86.02% was measured at 13.5 nm
    Fig. 3. Measured transmission values and theoretical calculation values ("cal.1") for 50 nm-thin freestanding Si filter in 10-20 nm band, where a transmission value as high as 86.02% was measured at 13.5 nm
    XPS measurement results of Si filter. (a) XPS full spectra on surface of filter; (b) distribution of atomic percentage during deep etching
    Fig. 4. XPS measurement results of Si filter. (a) XPS full spectra on surface of filter; (b) distribution of atomic percentage during deep etching
    Measured transmission values and theoretical calculation values for 50 nm-thin freestanding Si filter in 10-20 nm band after optimization of calculation model ("cal.2")
    Fig. 5. Measured transmission values and theoretical calculation values for 50 nm-thin freestanding Si filter in 10-20 nm band after optimization of calculation model ("cal.2")
    Layer compositionThickness of each layer /nmRoughness /nm

    SiO2 layer

    Si layer

    1.9

    48.9

    0.69

    0.50

    Table 1. XRR fitting results of Si thin film
    Mean value μ/nmStandard deviation σ/nmMax /nmMin /nmMax-Min2μ /%
    50.820.2551.2550.380.85
    Table 2. Measurement results of film-thickness uniformity
    Model usedLayer stackThickness of oxide layer on one side /nmTransmission(cal.)at 13.5 nm /%ΔT at 13.5 nm /%
    “cal.1”SiO2/Si/SiO21.988.642.62
    “cal.2”SiOx/SiOy/SiOx5.086.200.18
    Table 3. Comparison of two models used in IMD calculation
    Xiaoran Li, Yiwen Chen, Mojie Xie, Jiaoling Zhao. Freestanding Silicon Thin-Film Filters with High Transmission in Extreme Ultraviolet Range[J]. Acta Optica Sinica, 2023, 43(19): 1936001
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