[2] NAGEL H,SCHMIDT J,ABERLE A G,et al.Exceptionally high bulk minority-carrier lifetime in block-cast multicrystalline silicon[C].Proceedings of the 14th European Photovoltaic Solar Energy Conference,Stephens,Bedford,1997:762-765.
[3] ABERLE A G.Overview on SiN surface passivation of crystalline silicon solar cells[J].Solar Energy Materials & Solar Cells,2001,65(1):239 -248.
[7] SOPORI B,DENG X,BERNNER J P,et al.Hydrogen in silicon:A discussion of diffusion and passivation mechanisms[J].Solar Energy Materials & Solar Cells,1996,41 (1-4):159-169.
[8] ROHATGI A,YELUNDUR V,JEONG J,et al.Fundamental understanding and implementation of al-enhanced PECVD SiNx hydrogenation in silicon ribbons[J].Solar Energy Materials & Solar Cells,2002,74(1-4):117-126.
[9] RAY S K,DAS K,MAITI C K,et al.Effect of reactive-ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion-beam sputtering[J].Journal of Applied Physics,1994,75(12):8145-8152.