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    Journals >Acta Photonica Sinica >Volume 36 >Issue 6 >Page 1097 > Article
    • Acta Photonica Sinica
    • Vol. 36, Issue 6, 1097 (2007)
    Properties of Silicon Nitride Films Deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition
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    [in Chinese]. Properties of Silicon Nitride Films Deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition[J]. Acta Photonica Sinica, 2007, 36(6): 1097 Copy Citation Text show less

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    [in Chinese]. Properties of Silicon Nitride Films Deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition[J]. Acta Photonica Sinica, 2007, 36(6): 1097
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