Author Affiliations
Engineering Research Center of Nuclear Technology Application, Ministry of Education, East China University of Technology, Nanchang 330013, Jiangxi , Chinashow less
Fig. 1. Device structure in numerical simulation. (a) (n)Sb2S3 heterojunction thin film solar cell; (b) (p)Sb2S3 heterojunction thin film solar cell; (c) (n)Sb2S3/(p)Sb2S3 homojunction thin film solar cell
Fig. 2. Sb2S3 homojunction solar cells with different ETLs. (a) J-V curves; (b) quantum efficiency
Fig. 3. Sb2S3 homojunction solar cells with different HTLs. (a) J-V curve; (b) quantum efficiency
Fig. 4. Performance of three kinds of Sb2S3 solar cells. (a) J-V curves; (b) quantum efficiency; (c) energy band structure
Fig. 5. Effects of bulk defect density on device performance parameters. (a) Voc; (b) Jsc;(c) FF;(d) η
Fig. 6. Effects of defect density at interface on device performance parameters. (a) Voc; (b) Jsc; (c) FF;(d) η
Parameter | FTO | (n)Sb2S3 | (p)Sb2S3 |
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Thickness /µm | 0.5 | 0.1 | 0.5 | εr | 9.00 | 7.08 | 7.08 | χ /eV | 4.00 | 3.72 | 3.72 | Eg /eV | 3.5 | 1.7 | 1.7 | NA /(1016 cm-3) | 0 | 0 | 4.08 | ND /(1017 cm-3) | 200.0 | 4.7 | 0 | Nc /(1018 cm-3) | 2.2 | 20.0 | 20.0 | Nv /(1019 cm-3) | 1.8 | 1.0 | 1.0 | µn /(cm2·V-1·s-1) | 20.0 | 9.8 | 9.8 | µp /(cm2·V-1·s-1) | 10 | 10 | 10 | Nt /cm-3 | 1015 | Variable | Variable |
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Table 1. Basic material parameters used in numerical simulation
Parameter | ZnO | CdS | SnO2 | TiO2 | ZnS |
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Thickness /µm | 0.06 | 0.06 | 0.06 | 0.06 | 0.06 | εr | 9 | 9 | 9 | 10 | 9 | χ /eV | 4.40 | 4.20 | 4.00 | 3.90 | 3.44 | Eg /eV | 3.3 | 2.4 | 3.6 | 3.2 | 3.6 | NA /cm-3 | 0 | 0 | 0 | 0 | 0 | ND /(1016 cm-3) | 100 | 100 | 10 | 100 | 4 | Nc /(1018 cm-3) | 2.2 | 2.2 | 18.0 | 22.0 | 18.0 | Nv /(1019 cm-3) | 1.8 | 1.8 | 2.4 | 1.8 | 2.4 | µn /(cm2·V-1·s-1) | 10 | 100 | 240 | 100 | 100 | µp /(cm2·V-1·s-1) | 2.5 | 25 | 25 | 25 | 25 | Nt /(1015 cm-3) | 1 | 1 | 1 | 1 | 1 |
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Table 2. Material parameters of EHLs
Parameter | NiOx | CuI | CuSCN | Cu2O | Spiro-OMeTAD |
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Thickness /µm | 0.05 | 0.05 | 0.05 | 0.05 | 0.15 | εr | 11.00 | 6.50 | 10.00 | 7.11 | 3.00 | χ /eV | 1.46 | 2.10 | 1.90 | 3.20 | 2.45 | Eg /eV | 3.60 | 2.98 | 3.40 | 2.17 | 3.00 | NA /(1018 cm-3) | 1 | 1 | 1 | 1 | 2 | ND /cm-3 | 0 | 0 | 0 | 0 | 0 | Nc /(1017 cm-3) | 160 | 280 | 170 | 2 | 220 | Nv /(1019 cm-3) | 1.1 | 1.0 | 250.0 | 1.1 | 1.8 | µn /(cm2·V-1·s-1) | 50 | 100 | 2×10-4 | 200 | 1.7×10-4 | µp /(cm2·V-1·s-1) | 50 | 43.9 | 0.2 | 80 | 2×10-4 | Nt /(1015 cm-3) | 1 | 1 | 1 | 1 | 1 |
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Table 3. Material parameters of HTLs
ETL | Voc /V | Jsc /(mA·cm-2) | FF /% | η /% |
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ZnO | 1.15 | 15.16 | 74.98 | 13.13 | CdS | 1.16 | 15.65 | 80.99 | 14.65 | SnO2 | 1.16 | 16.02 | 81.91 | 15.20 | TiO2 | 1.17 | 18.28 | 82.61 | 17.60 | ZnS | 1.18 | 20.33 | 82.79 | 19.84 |
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Table 4. Performance parameters of Sb2S3 homojunction solar cells with different ETLs
HTL | Voc /V | Jsc / (mA·cm-2) | FF /% | η /% |
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NiOx | 1.17 | 18.97 | 81.46 | 18.09 | CuI | 1.17 | 19.00 | 81.45 | 18.09 | CuSCN | 1.17 | 19.71 | 82.18 | 19.00 | Cu2O | 1.18 | 20.33 | 82.79 | 19.84 | Spiro-OMeTAD | 1.18 | 20.57 | 82.76 | 20.15 |
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Table 5. Performance parameters of Sb2S3 homojunction solar cells with different HTLs
Structure | Voc /V | Jsc / (mA·cm-2) | FF /% | η /% |
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(n)Sb2S3 | 1.10 | 10.79 | 78.56 | 8.60 | (p)Sb2S3 | 1.04 | 20.42 | 71.54 | 15.22 | (n)Sb2S3/(p)Sb2S3 | 1.19 | 20.66 | 83.04 | 20.34 |
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Table 6. Performance parameters of Sb2S3 solar cells with different structures