• Chinese Optics Letters
  • Vol. 9, Issue 1, 010401 (2011)
Xiaoqing Du1, Benkang Chang2, Yunsheng Qian2, and Pin Gao2
Author Affiliations
  • 1Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
  • 2Institute of Electronic Engineering and Opto-Electric Technology, Nanjing University of Science and Technology, Nanjing 210094, China
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    DOI: 10.3788/COL201109.010401 Cite this Article Set citation alerts
    Xiaoqing Du, Benkang Chang, Yunsheng Qian, Pin Gao. Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer[J]. Chinese Optics Letters, 2011, 9(1): 010401 Copy Citation Text show less
    References

    [1] Y. Zhang, K. Chu, X. Shao, Y. Yuan, D. Liu, X. Chen, and X. Li, Acta Opt. Sin. (in Chinese) 29, 3515 (2009).

    [2] M. Zhao, J. Li, X. Wang, M. Zhou, J. Bao, and F. Gu, Acta Opt. Sin. (in Chinese) 29, 3409 (2009).

    [3] J. Stock, G. Hilton, T. Norton, B. Woodgate, S. Aslam, and M. Ulmer, Proc. SPIE 5898, 58980F (2005).

    [4] O. Siegmund, J. Vallerga, J. Mcphate, J. Malloya, A. Tremsin, A. Martin, M. Ulmer, and B. Wessels, Nuclear Instr. Methods in Phys. Res. A. 567, 89 (2006).

    [5] J. Qiao, B. Chang, X. Du, J. Niu, and J. Zou, Acta Phys. Sin. (in Chinese) 59, 2855 (2010).

    [6] A. M. Dabiran, A. M. Wowchak, and P. P. Chow, Proc. SPIE 7212, 721213 (2009).

    [7] O. H. W. Siegmund, A. S. Tremsin, J. V. Vallerga, J. B. McPhate, J. S. Hull, J. Malloy, and A. M. Dabiran, Proc. SPIE 7021, 70211B (2008).

    [8] X. Du, B. Chang, Y. Qian, R. Fu, P. Gao, and J. Qiao, Chinese J. Lasers (in Chinese) 37, 385 (2010).

    [9] J. Qiao, B. Chang, S. Tian, X. Du, and P. Gao, Acta Phys. Sin. (in Chinese) 58, 5847 (2009).

    [10] X. Du, B. Chang, Z. Zong, and Y. Qian, Opto-Electron. Eng. (in Chinese) 29, (suppl.) 55 (2002).

    Data from CrossRef

    [1] Yan-Jun Ji, Jun-Ping Wang, You-Wen Liu. Effects of Al component content on optoelectronic properties of Al x Ga 1? x N . Chinese Physics B, 27, 106102(2018).

    [2] Lei Liu, Feifei Lu, Jian Tian, Xingyue Zhangyang, Zhisheng Lv. The effective light‐harvesting performance of graded compositional Al x Ga 1?x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation . International Journal of Energy Research, 44, 5779(2020).

    Xiaoqing Du, Benkang Chang, Yunsheng Qian, Pin Gao. Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer[J]. Chinese Optics Letters, 2011, 9(1): 010401
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