Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer

Xiaoqing Du; Benkang Chang; Yunsheng Qian; Pin Gao

doi:10.3788/COL201109.010401

Journals >Chinese Optics Letters >Volume 9 >Issue 1 >Page 010401 > Article

Chinese Optics Letters
Vol. 9, Issue 1, 010401 (2011)

Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer

Xiaoqing Du¹, Benkang Chang², Yunsheng Qian², and Pin Gao²

Author Affiliations

¹Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

²Institute of Electronic Engineering and Opto-Electric Technology, Nanjing University of Science and Technology, Nanjing 210094, China

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DOI: 10.3788/COL201109.010401 Cite this Article Set citation alerts

Xiaoqing Du, Benkang Chang, Yunsheng Qian, Pin Gao. Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer[J]. Chinese Optics Letters, 2011, 9(1): 010401 Copy Citation Text

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Xiaoqing Du, Benkang Chang, Yunsheng Qian, Pin Gao. Transmission-mode GaN photocathode based on graded AlxGa1 xN buffer layer[J]. Chinese Optics Letters, 2011, 9(1): 010401

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