• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 6, 932 (2005)
[in Chinese], [in Chinese]*, [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature characteristics of Au/n-4H-SiC Schottky UV photodiode[J]. Chinese Journal of Quantum Electronics, 2005, 22(6): 932 Copy Citation Text show less
    References

    [2] Chow P P, Klaassen J J, et al. Group Ⅲ-nitride materials for ultraviolet detection applications [C] // SPIE,2000, 3948: 295-303.

    [4] Cooper Jr J A, Agarwal A K, Hara K, et al. Foreword-special issue on silicon carbide electronic devices [A].James A, Cooper Jr. Special issue on silicon carbide electronic devices [C] // IEEE, New York: 1999. 442.

    [5] Brown D M, Downey E T, Mario Ghezzo, et al. Silicon carbide UV photodiodes [J]. IEEE Transactions on Electron Devices, 1993, 40(2): 325-333.

    [7] Monroy F, Omnes F, Calle F. Wide-bandgap semiconductor ultraviolet photodetectors [J]. Semiconductor Science and Technology, 2003, 18: 36-37.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature characteristics of Au/n-4H-SiC Schottky UV photodiode[J]. Chinese Journal of Quantum Electronics, 2005, 22(6): 932
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