Based on silicon carbide（SiC） wide bandgap semiconductor material and device， the hybrid compatibility of design and fabrication of wide bandgap device and ultra-high vacuum device was realized. A novel hybrid photodetector based on SiC was developed. The effective diameter of the photosensitive surface of the device could reach 25 mm. The electronic bombarded gain was nearly 200 times， and the full width at half maximum（FWHM） of response signal was 4.5 ns. It provided a solid foundation for the theoretical research and engineering application of vacuum and solid‑state hybrid photodetector.