Author Affiliations
1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China2College of Physics, Jilin University, Changchun 130012, Chinashow less
Fig. 1. (a) Schematic diagram of 3D perovskite and 2D Ruddlesden–Popper perovskite structures; (b)–(d) schematic diagram of process for preparing (PEA)2PbBr4 microwire crystals by imprinting; (e)–(g) regioselective ion exchange preparation of (PEA)2PbBr4–(PEA)2PbBr4−xIx lateral heterojunction.
Fig. 2. (a) SEM image of the lateral heterojunction array; (b) I, Pb, Br element distribution of lateral heterojunction; (c)–(e) fluorescence microscope photos of lateral heterojunction array; (f) absorption spectrum, (g) XRD pattern, and (h) Raman spectrum of (PEA)2PbBr4−xIx, (PEA)2PbBr4, and (PEA)2PbI4; (i) typical time-resolved photoluminescence curves of (PEA)2PbBr4 and (PEA)2PbBr4−xIx.
Fig. 3. (a) Color plot of TA spectra from (PEA)2PbBr4; (b) TA spectra at 398–410 nm; (c) TA kinetics probed at a selected wavelength of 405 nm from (a); (d) color plot of TA spectra from (PEA)2PbBr4−xIx; (e) TA spectra at 498–545 nm; (f) TA kinetics probed at a selected wavelength of 518.9 nm from (d).
Fig. 4. (a) Sketch of a lateral heterojunction photodetector based on (PEA)2PbBr4−(PEA)2PbBr4−xIx; (b) I-V curve of PD under different light intensities; (c) I-t curve of the PD under different intensities of on–off light irradiation and 5 V bias; (d) variation of photocurrent and R with light intensity under 5 V bias; (e) I-t curve of PD under different on–off light intensities and 0 V bias; (f) under 0 V bias, the photocurrent and R versus light intensity.
Fig. 5. (a) Sketch of polarized light detection by the lateral heterojunction-based photodetector; (b) I-t curve of PD under light irradiation of different polarization angles; (c) photocurrent dependence on the polarization angle of the incident light. When the incident light rotates in the plane of the heterojunction: (d) photocurrent dependence on the angle of the incident light; (e) I-t curve of PD under the illumination of different incident angles. When the incident light rotates in the plane perpendicular to the heterojunction: (f) photocurrent dependence on the incident light angle; (g) I-t curve of PD under light irradiation at different incident angles.
Fig. 6. (a), (b) Photocurrent change curves of PD under different bending states; (c), (d) PD performance after different bending cycles; (e), (f) PD performance after storage in air for different times.
Fig. 7. (a) SEM image of a PDMS template with a microscale striped structure. (b) AFM image of (PEA)2PbBr4 microwire crystals. (c) Fluorescence microscope photograph of (PEA)2PbBr4 microwire crystals. (d) SEM image of the cross-section of (PEA)2PbBr4 microwire crystals.
Fig. 8. (a) Mapping of element I after 7 days. (b) Mapping of element Br after 7 days. (c)–(e) Fluorescence microscope images of heterogeneous junctions after 7 days.
Fig. 9. (a) Dark current of the device at a bias voltage of 5 V. (b) Variation curves of D and EQE of the device under different incident light intensities at a bias voltage of 5 V. (c) Dark current of the device at a bias voltage of 0 V. (d) Variation curves of D and EQE of the device under different incident light intensities at a bias voltage of 0 V.
Materials | (nm) | | (Jones) | Flexible | Long-Term Stability | Reference |
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| 460 | 8.12 at 30 V | | No | NA | [1] | | 405 | 0.39 at 1 V | | No | NA | [30] | | 650 | 0.125 at 0 V | NA | 90% after 500 bending cycles | 85% after 15 days | [2] | | 500 | at 5 V | NA | No | NA | [31] | | 405 | 0.444 at 0 V 3.463 at 1.5 V | | 9000 bending cycles | NA | [32] | | 405 | | | No | No obvious change after 40 days | [33] | 2D/3D perovskite | 532 | at 2 V | NA | No | 71% after 30 days | [34] | | 405 | at 0 V | | No | Negligible degradation after 30 days | [19] | | 532 | 265 at 5 V | NA | No | 90% after 10 days | [20] | | 365 | 748 at 5 V 13.5 at 0 V | at 5 Vat 0 V | 78% after 3000 bending cycles | 81% after 144 days | This study |
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Table 1. Performance of Perovskite–Perovskite Heterojunction-Based Photodetectors