• Microelectronics
  • Vol. 52, Issue 3, 459 (2022)
DAI Yang1, DANG Jiangtao1, YE Qingsong1, LU Zhaoyang1, ZHANG Weiwei2, LEI Xiaoyi1, ZHAO Shenglei3, and ZHAO Wu1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • show less
    DOI: 10.13911/j.cnki.1004-3365.210267 Cite this Article
    DAI Yang, DANG Jiangtao, YE Qingsong, LU Zhaoyang, ZHANG Weiwei, LEI Xiaoyi, ZHAO Shenglei, ZHAO Wu. Study on Noise Performance of a GaN Homo-Heterojunction IMPATT Diode[J]. Microelectronics, 2022, 52(3): 459 Copy Citation Text show less
    References

    [1] SARIEDDEEN H, SAEED N, AL-NAFFOURI T Y, et al. Next generation terahertz communications:a rendezvous of sensing, imaging, and localization [J]. IEEE Commun Mag, 2020, 58(5): 69-75.

    [2] NAGATSUMA T, DUCOURNAU G, RENAUD C C. Advances in terahertz communications accelerated by photonics [J]. Nat Photonics, 2016, 10(6): 371-379.

    [3] ALEKSANDER S, DAMJAN B, MIHA G, et al. A THz receiver with novel features and functionality [J]. Sensors-Basel, 2018, 18(11): 3793.

    [4] CHEN K J, HBERLEN O, LIDOW A, et al.GaN-on-Si power technology: devices and applications [J]. IEEE Trans Elec Dev, 2017, 64(3): 779-795.

    [5] LO I. Advances in GaN crystals and their applications [J]. Crystals, 2018, 8(3): 117.

    [6] CAO L, YE H, WANG J, et al. W-band GaN IMPATT diodes for high power millimeter-wave generation [C]// IEEE NAECON. Dayton, OH, USA. 2019: 728-731.

    [7] DONG J, ERCAN B, JIA Z, et al. Demonstration of GaN impact ionization avalanche transit-time (IMPATT) diode. [C]// DRC. Columbus, OH, USA. 2020: 1-2.

    [8] KE W C, LEE S J, CHEN S L, et al. Effects of growth conditions on the acceptor activation of Mg-doped p-GaN [J]. Mater Chem Phys, 2012, 133(2-3): 1029-1033.

    [9] TRIPATHY P R, CHOUDHURY S K, PATI S P. A new model of heterostructure GaAs/Ge IMPATT diode at W-band frequency [C]// DAE Sol Sta Phys Symp. 2017: 1-3.

    [10] LI X, YANG L, MA X, et al. A new lattice-matched In017Al083N~GaN based heterostructure IMPATT diode for terahertz application [J]. Semicond Sci Tech, 2019, 34(11): 115011.

    [11] PANDA A K, PAVLIDIS D, ALEKSEEV E A. Noise characteristics of GaN-based IMPATTs [J]. IEEE Trans Elec Dev, 2001, 48(7): 1473-1475.

    [12] DHAR R, MUKHOPADHAY S J, MITRA M. A study on the noise performance of an Si based IMPATT device for different junction temperature [C]// IEEE Calcutta Conf (CALCON). Kolkata, India. 2020: 148-151.

    [13] LI X S, YANG L A, ZHANG X Y, et al.GaN/AlxGa1-xN/GaN heterostructure IMPATT diode for D-band applications [J]. Appl Phys A-Mater, 2019, 125(3): 205.

    [14] REKLAITIS A, REGGIANI L. Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode [J]. J Appl Phys, 2004, 95(12): 7925-7935.

    [15] YANG L A, HAO Y, YAO Q, et al. Improvednegative differential mobility model of GaN and AlGaN for a terahertz Gunn diode [J]. IEEE Trans Elec Dev, 2011, 58(4): 1076-1083.

    [16] GOLDBERG Y, LEVINSHTEIN M E, RUMYANTSEV S L.Properties of advanced semiconductor materials: GaN, AIN, InN, BN, SiC, SiGe [M]. New York: Wiley, 2001: 93-146.

    [17] VERHULST A S, VANDENBERGHE W G, MAEX K, et al.Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization [J]. J Appl Phys, 2008, 104(6): 494-82.

    [18] VERHULST A S, LEONELLI D, ROOYACKERS R, et al. Drain voltage dependent analytical model of tunnel field-effect transistors [J]. J Appl Phys, 2011, 110(2): 347.

    [19] KANE E O. Theory of tunneling [J]. J Appl Phys, 1961, 32(1): 83-91.

    [20] ELTA M E, HADDAD G I. Mixed tunneling and avalanche mechanisms in p-n junctions and their effects on microwave transit-time devices [J]. IEEE Trans Elec Dev, 1978, 25(6): 694-702.

    [21] BONANI F, GHIONE G. Noise in semiconductor devices-modeling and simulation [M]. Berlin: Springer, 2001: 1-38.

    DAI Yang, DANG Jiangtao, YE Qingsong, LU Zhaoyang, ZHANG Weiwei, LEI Xiaoyi, ZHAO Shenglei, ZHAO Wu. Study on Noise Performance of a GaN Homo-Heterojunction IMPATT Diode[J]. Microelectronics, 2022, 52(3): 459
    Download Citation