Quantum efficiency of light emitting diodes(LED) is improved by redesigning the multiple quantum well of GaN based LED, and the reason for these improvements is researched by theoretical calculation in ways of electric field in quantum well, carrier distribution, electronic leakage and radiation coincidence efficiency. For LED optoelectronic devices, improving the radiative recombination efficiency is benefitial to releasing electron leakage, increasing luminous power of LED, releasing the efficiency drop of LED under high current. The designed construction adopts InGaN/GaN as the barriers of LEDs, which attributes to alleviation of the electrostatic field induced by polarization, increasing the overlap ratio of electrons and holes, and thus increasing the radiation recombination rate. The results show that under 160 mA injection current, the external quantum efficiency is improved by 20%.