[1] OLSEN G H,JOSHI A M,BAN V S,et al.Multiplexed 256 element InGaAs detector arrays for 0.8-1.7 μm room-temperture operation[C]//Proceedings of SPIE,1988,972:279-285.

[2] KOZLOWSKI L J,TENNANT W E,ZANDIAN M,et al.SWIR staring FPA performance at room temperature[C]//Proceedings of SPIE,Infrared Detectors and Focal Plane Arrays Ⅳ,1996,2746:93-100.

[3] OLSEN G,JOSHI A,LANGE M,et al.A 128×128 InGaAs detector array for 1.0-1.7 μm[C]//Proceedings of SPIE,Infrared Technology ⅩⅥ,1990,1341:432-437.

[4] MOY J P,HUGON X,CHABBAL J,et al.3 000 InGaAs photodiode multiplexed linear array for the spot 4 SWIR channel[C]//Proceedings of SPIE,Infrared Detetors,Focal Plane Arrays,and Imaging Sensors,1989,1107:137-151.

[5] REDFERN D A,FANG W,MUSCA C A,et al.Towards a laser-beam-induced-current test structure for the nondestructive determination of junction depth in HgCdTe photodiodes[C]//Proceedings of Conf on Optoelectron and Microelectron Mat and Dev IEEE,2000:169-172.

[6] BAJAJ LTENNANT W E.Remote contact LBIC imaging of defects in semiconductors[J].Journal of Crystal Growth,1990,103:170-178.

[7] YANQIU L,NILI W,CHUNQUAN Z,et al.The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement[J].Semicond Sci Technol,2006,21:771-774.

[8] JOHN B.Properties of Indium Phosphide[M].London:Indpec,1991.

[9] SZE S M.Physics of Semiconductor Devices[M].New York:Willey,1981.