• Opto-Electronic Engineering
  • Vol. 34, Issue 10, 129 (2007)
[in Chinese]1, [in Chinese]2, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese]. Theoretical and experimental study on a new optical sensor[J]. Opto-Electronic Engineering, 2007, 34(10): 129 Copy Citation Text show less
    References

    [1] Kelly Michael T,Bocarsly Andrew B.Mechanisms of photoluminescent quenching of oxidized porous silicon Applications to chemical sensing[J].Coordination Chemistry Reviews Volume,1998,171(1):251-259.

    [2] De Stefano L,Moretti L,Rendina I.Porous Silicon Microcavities for Optical Hydrocarbons Detection[J].Sensors and Actuators A,2003,104:179-182.

    [3] Allcock P,Snow P A.Time-resolved Sensing of Organic Vapors in Low Modulating Porous Silicon Dielectric Mirrors[J].Appl.Phys,2001,90(10):5052-5057.

    [4] Barillaro G,Diligenti A,Marola G.A silicon crystalline resistor with an adsorbing,porous layer as gas sensor[J].Sensors and Actuators B,2004,105:278-282.

    [5] Barillaro G,Nannini A,Pieri F.APSFET:a new,porous silicon-based gas sensing device[J].Sensors and Actuators B,2003,93:263-270.

    [6] Rittersma Z M,Splinter A,Bodecker A.A Novel Surface-Micromachined Capacitive Porous Silicon Humidity Sensor[J].Sensors and Actuators B,2000,68:210-217.

    [7] de Stefano Luca,Rendina Ivo,Moretti Luigi.Smart Optical Sensors for Chemical Substances Based on Porous Silicon Technology[J].Applied Optics,2004,43(1):167-172.

    [8] Astrova E V,Tolmachev V A.Effective refactive index and composition of oxidized porous silicon films[J].Materials Science and Engineering,2002,69(70):142-148.

    [9] Regg S J.Adsorption,Surface Area and Porosity[M].London:Academic Press Inc,1982.

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    [1] ZOU Shuang, XU Zhongbao, Lü Qinghua. Extension Characteristics of the Depth of Field for Microscopic System[J]. Opto-Electronic Engineering, 2013, 40(5): 120

    [in Chinese], [in Chinese], [in Chinese]. Theoretical and experimental study on a new optical sensor[J]. Opto-Electronic Engineering, 2007, 34(10): 129
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