• Infrared and Laser Engineering
  • Vol. 50, Issue 4, 20200231 (2021)
Yanfeng Wei, Quanzhi Sun, Juan Zhang, and Ruiyun Sun
Author Affiliations
  • Key Laboratory of Infrared Image Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    DOI: 10.3788/IRLA20200231 Cite this Article
    Yanfeng Wei, Quanzhi Sun, Juan Zhang, Ruiyun Sun. Photoelectric characteristics of HgCdTe with Au-doping[J]. Infrared and Laser Engineering, 2021, 50(4): 20200231 Copy Citation Text show less
    Schematic of the Hg-rich annealing experiment
    Fig. 1. Schematic of the Hg-rich annealing experiment
    Results of the temperature dependent Hall in different annealing conditions
    Fig. 2. Results of the temperature dependent Hall in different annealing conditions
    Distribution of Au in the HgCdTe (SIMS)
    Fig. 3. Distribution of Au in the HgCdTe (SIMS)
    Schematic of the blackbody response measurement
    Fig. 4. Schematic of the blackbody response measurement
    Layout of the pixels and the wiring in the testing chip (partial)
    Fig. 5. Layout of the pixels and the wiring in the testing chip (partial)
    SamplesCd compositionConcentration of doped AuAnnealing condition
    LPEV0958A0.219 78.0E+16Hg-rich1
    LPEV09560.216 08.0E+16Hg-rich1
    LPEV1042C0.217 71.0E+16Hg-rich2
    LPEV0978D0.222 31.0E+16Hg-rich2
    LPEV1022D0.218 71.0E+16Hg-rich2
    LPEV0804C0.218 41.0E+16Te-Rich
    Table 1. [in Chinese]
    Label of the pixelTest conditionsResponse voltage /µV
    D1-1 119
    D2 is short-circuited707.9
    D5 is short-circuited696.1
    D3 is short-circuited764.4
    D7 is short-circuited791
    D4 is short-circuited789.7
    D8 is short-circuited798.5
    D6 is short-circuited773.6
    D9 is short-circuited809.5
    Table 2. [in Chinese]
    Label of the pixelTest conditionsResponse voltage/µV
    D6-1 182
    D1-D5,D7-D9 are short-circuited94.7
    Table 3. [in Chinese]
    Yanfeng Wei, Quanzhi Sun, Juan Zhang, Ruiyun Sun. Photoelectric characteristics of HgCdTe with Au-doping[J]. Infrared and Laser Engineering, 2021, 50(4): 20200231
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