• Chinese Journal of Quantum Electronics
  • Vol. 19, Issue 4, 310 (2002)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Crystal Growth and Spectral Properties of Nd:GdVO4[J]. Chinese Journal of Quantum Electronics, 2002, 19(4): 310 Copy Citation Text show less
    References

    [1] Wyss Chr P, Lüthy W, Weber H. P et al. Performance of a diode-punped 5 W Nd3+: GdVO4 michrochip laser at 1.6μm [J]. App. Phys. B, 1999, 68:659-661

    [2] Zhang Huaijin, Meng Zianlin, Liu Junhai et al. Growth of lowly Nd doped GdVO4 single crystal and its laser properties [J]. J. Crystal Growth, 2000, 216:367-371

    [3] Li C, Song J, Shen D et al. Diode-pumped passively Q-switched Nd: GdVO4 lasers operating at 1.06μm wavelength [J]. Appl. Phys. B, 2000, 471-474

    [4] Wang C. Q, Chow Y. T, Reekie L et al. A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4 and Nd: YVO4 crystals [J]. Appl. Phys. B, 2000, 769-772

    [5] Liu J, Wang C, Wang C. Q et al. Diode end-pumped Q-switched high-power intracavity frequency-doubled Nd:GdVO4/KTP green laser [J]. Appl. Phys. B, 2001, 72:171-174

    [6] Jensen T, Ostoumov V G, Meyn J P et al. Spectroscopic characterization and laser performance of diode-laserpumped Nd:GdVO4 [J]. Applied Physics B, 1994, 59:373-379

    [7] Studenikin P A, Zagumennyi A I, Zavartsev Yu D et al. GdVO4 as a new medium for solid-state lasers: some optical and thermal properties lasers: some optical and thermal properties of cystals doped with Cd3+, Tm3+, and Er3+ ions [J]. Quantum Electronics, 1995, 25(12): 1162-1165

    [11] Anderson F G, Summers P L, Weidner H et al. Interpretive crystal-field parameters: Application to Nd3+ in GdVO4 and YVO4 [J]. Phys. Rev. B, 1995, 50(20): 14802-14808

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Crystal Growth and Spectral Properties of Nd:GdVO4[J]. Chinese Journal of Quantum Electronics, 2002, 19(4): 310
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