• Electro-Optic Technology Application
  • Vol. 30, Issue 3, 67 (2015)
WANG An1, XU Wei-dong1, ZHANG Bao-shan2, YANG Jun-tang1, and CUI Guang-zhen1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: Cite this Article
    WANG An, XU Wei-dong, ZHANG Bao-shan, YANG Jun-tang, CUI Guang-zhen. Magnetron Sputtering Method for VO2 Thin Film and Resistance Mutation Test[J]. Electro-Optic Technology Application, 2015, 30(3): 67 Copy Citation Text show less
    References

    [1] Morin F J. Oxides which show a metal-to-insulator transition at the neel temperature[J]. Phys Rev Lett, 1959(3): 34.

    [2] Lee S B. Origin of variation in switching voltages in threshold-switching phenomena of thin films[J]. Applied Physics Letters, 2013, 102(6): 063501.

    [4] YNDC, XU N K, ZHANG J Y, et al.Vanadium dioxide films with good electrial switching property[J]. J Phys, 1996, D29(4): 1051-1057.

    [5] Dumas-Bouchia F. Rf-microwaves witches based on reversible semi-conductor-metal transition of thin films synthesized by pulsed-laser deposition[J]. Applied Physics Letters, 2007, 91(22): 223505.

    [10] SHI Qi-wu, HUANG Wan-xia. Nanostructured [VO2]film with high transparency and enhanced switching ratio in THz range[J]. Applied Physics Letters, 2014,104: 10.1063/1.4863408.

    WANG An, XU Wei-dong, ZHANG Bao-shan, YANG Jun-tang, CUI Guang-zhen. Magnetron Sputtering Method for VO2 Thin Film and Resistance Mutation Test[J]. Electro-Optic Technology Application, 2015, 30(3): 67
    Download Citation