Realization and Improvement of Double Modulation Methods for Fourier Transform Luminescence Measurements in Middle and Far Infrared Band

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[2] Lopes V C, Syllaios A J, Chen M C. Minority carrier lifetime in mercury cadmium telluride. Semicond. Sci. Techol., 1993, 8(65):824～841

[3] Tomm J W, Herrmann K H, Yunovich A E. Infrared photoluminescence in narrow-gap semiconductors. Phys. Stat. Sol. (A), 1990, 122(1):11～42

[5] Antolini A, Lamberti C. Computing errors in Fourier transform photoluminescence. Appl. Surface Sci., 1991, 50(1～4):212～217

[6] Chang Y, Chu J H, Tang W G et al.. Optical and electrical investigation on Fe impurity behavior in HgCdTe. In: Shen S C, Tang D Y, Zhen G Z et al.. Proc. the Eighth International Conf. on Narrow Gap Semiconductors. Singapore: World Scientific Publishing Co. Pte. Ltd., 1998

[8] Tran T K, Parikh A, Pearson S D. Magnetoluminescence properties of Hg1-xCdxTe epitaxial layers and superlattice structures grown by metalorganic molecular beam epitaxy. J. Electron. Mater., 1996, 25(8):1203～1208

[10] Fuchs F, Lusson A, Wagner J et al.. Fourier transform infrared photoluminescence. Proc. SPIE, 1989, 1145:323

[11] Fuchs F, Lusson A, Koidle P et al.. Fourier transform infrared photoluminescence of Hg1-xCdxTe. J. Cryst. Growth, 1990, 101(1～4):722～726

[12] Fuchs F, Shmitz J, Obloh H et al.. Photoluminescence of InAs/AlSb single quantum wells. Appl. Phys. Lett., 1994, 64(13):1665～1667

[13] Schmidt T, Lischka K, Zulehner W. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors. Phys. Rev. (B), 1992, 45(16):8089～8094

[14] Schmidt T, Daniel G, Lischka K. The excitation power dependence of the near band edge photoluminescence of Ⅱ-Ⅵ semiconductors. J. Cryst. Growth, 1992, 117(1～4):748～752