• Journal of Inorganic Materials
  • Vol. 34, Issue 8, 797 (2019)
Ya-Ping ZHANG1, Wen-Ming DING1, Hai-Feng ZHU1, Cheng-Xing HUANG1, Lian-Qing YU1、*, Yong-Qiang WANG1, Zhe LI2, and Fei XU3
Author Affiliations
  • 1College of Science, China University of Petroleum, Qingdao 266580, China
  • 2Luoke Environment Protection Co. Ltd., Qingdao 266071, China
  • 3Shengjin Rare Earth on Co. Ltd., Zibo 255039, China
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    DOI: 10.15541/jim20180463 Cite this Article
    Ya-Ping ZHANG, Wen-Ming DING, Hai-Feng ZHU, Cheng-Xing HUANG, Lian-Qing YU, Yong-Qiang WANG, Zhe LI, Fei XU. Photoelectrochemical Properties of MoSe2 Modified TiO2 Nanotube Arrays[J]. Journal of Inorganic Materials, 2019, 34(8): 797 Copy Citation Text show less
    XRD patterns of MoSe2/TiO2
    1. XRD patterns of MoSe2/TiO2
    SEM images of MoSe2/TiO2 (a-d) and EDS analysis (e) of sample in (b)
    2. SEM images of MoSe2/TiO2 (a-d) and EDS analysis (e) of sample in (b)
    (a) Linear sweep voltammol/Lograms, (b) Nyquist diagrams and (c) Mott-Schottky plots for MoSe2/TiO2 samples deposited at -0.5 V with different H2SeO3 concentrations
    3. (a) Linear sweep voltammol/Lograms, (b) Nyquist diagrams and (c) Mott-Schottky plots for MoSe2/TiO2 samples deposited at -0.5 V with different H2SeO3 concentrations
    (a) Linear sweep voltammol/Lograms, (b) Nyquist diagrams and (c) Mott-Schottky plots for MoSe2/TiO2 samples deposited at different voltages with 2 mmol/L H2SeO3
    4. (a) Linear sweep voltammol/Lograms, (b) Nyquist diagrams and (c) Mott-Schottky plots for MoSe2/TiO2 samples deposited at different voltages with 2 mmol/L H2SeO3
    SEM images of MoSe2/TiO2 heat-treated at different temperatures
    5. SEM images of MoSe2/TiO2 heat-treated at different temperatures
    (a) Linear sweep voltammol/Lograms, (b) Mott-Schottky, (c) Amperometric i-t curves, (d) Nyquist diagrams With insert showing Insert is equivalent circuit, and (e) schematic diagram of carrier for MoSe2/TiO2 heat-treated at different temperatures
    6. (a) Linear sweep voltammol/Lograms, (b) Mott-Schottky, (c) Amperometric i-t curves, (d) Nyquist diagrams With insert showing Insert is equivalent circuit, and (e) schematic diagram of carrier for MoSe2/TiO2 heat-treated at different temperatures
    SampleRb/(Ω•cm-2)Csc/ (F•cm-2)Rsc/(Ω•cm-2)Cdl/(F•cm-2)Rct/(Ω•cm-2)
    330 ℃2.111.60×10-311.671.3×10-3345.4
    300 ℃0.607.64×10-461.678.0×10-2283.9
    270 ℃0.851.37×10-319.741.6×10-1305.5
    Unheated1.942.49×10-30.531.1×10-3331.6
    Table 1. Equivalent circuit parameters of MoSe2/TiO2
    Ya-Ping ZHANG, Wen-Ming DING, Hai-Feng ZHU, Cheng-Xing HUANG, Lian-Qing YU, Yong-Qiang WANG, Zhe LI, Fei XU. Photoelectrochemical Properties of MoSe2 Modified TiO2 Nanotube Arrays[J]. Journal of Inorganic Materials, 2019, 34(8): 797
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