FABRICATION AND STUDY ON THE HgCdTe MIS DEVICE OF CdTe+ZnS DOUBLE INSULATOR FILMS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 20 >Issue 4 >Page 249 > Article

Journal of Infrared and Millimeter Waves
Vol. 20, Issue 4, 249 (2001)

FABRICATION AND STUDY ON THE HgCdTe MIS DEVICE OF CdTe+ZnS DOUBLE INSULATOR FILMS

[in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. FABRICATION AND STUDY ON THE HgCdTe MIS DEVICE OF CdTe+ZnS DOUBLE INSULATOR FILMS[J]. Journal of Infrared and Millimeter Waves, 2001, 20(4): 249 Copy Citation Text

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References

[1] PETER Capper. Properties of Narrow Gap Cadmium-based Compounds. London: the Institution of Electrical Engineers,EMIS datareviews Series No.10,1994

[2] Paul R. Norton. Infrared image sensors.Optical Engineering,1991,30(11): 1649-1663

[7] Willardson R K, Beer A C. Semiconductors and Semimetals. New York: Academic Press, a Subbsidiary of Harcourt Brace Jovanovich, Publishers, 1981,18: 221

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