FABRICATION AND STUDY ON THE HgCdTe MIS DEVICE OF CdTe+ZnS DOUBLE INSULATOR FILMS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 20 >Issue 4 >Page 249 > Article

Journal of Infrared and Millimeter Waves
Vol. 20, Issue 4, 249 (2001)

FABRICATION AND STUDY ON THE HgCdTe MIS DEVICE OF CdTe+ZnS DOUBLE INSULATOR FILMS

[in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. FABRICATION AND STUDY ON THE HgCdTe MIS DEVICE OF CdTe+ZnS DOUBLE INSULATOR FILMS[J]. Journal of Infrared and Millimeter Waves, 2001, 20(4): 249 Copy Citation Text

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Abstract

Keywords

device surface passivation HgCdTe infrared focal plane array ZnS.CdTe film ZnS.

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