[1] M. Revermann,A. Timmermann,J. Meinschien et al.. Efficient high-brightness diode laser modules offer new industrial applications[C]. SPIE,2007,6456:64560Q
[2] C. Geldi,O. Bozkulak,H. O. Tabakoglu et al.. Development of a surgical diode-laser system:controlling the mode of operation[J]. Photomed Laser Surg.,2006,24(6):723-729
[3] F. Amzajerdian,B. L. Meadows,N. R. Baker et al.. Advancement of high power quasi-CW laser diode arrays for space-based laser instruments[C]. SPIE,2005,5659:157-162
[7] A. R. Dhamdhere,A. P. Malshe,W. F. Schmidt et al.. Investigation of reliability issues in high power laser diode bar packages[J]. Microelectron Reliab.,2003,43(2):287-95
[8] D. Botez,D. R. Scifres. Diode Laser Arrays[M]. Cambridge:University Press,1994. 295-335
[9] J. W. Shi,E. S. Jin,D. S. Gao. The junction voltage saturation and reliability of semiconductor lasers[J]. Opt. Quant. Electron.,1992,24(7):775-781
[10] J. W. Shi,E. S. Jin,H. Y. Li et al.. The characteristic junction parameter of a semiconductor laser and its relation with reliability[J]. Opt. Quant. Electron.,1996,28(6):647-651
[11] P. J. Anthony,N. E. Schumaker. Ambipolar transport in double heterostructure injection lasers[J]. IEEE Electron Device Lett.,1980,1(4):58-60
[12] T. Paoli,P. A. Barnes. Saturation of the junction voltage in stripe-geometry (AlGa)As double-heterostructure junction lasers[J]. Appl. Phys. Lett.,1976,28(12):714-716
[13] H. Ishikawa,K. Hanamitsu,M. Takusagawa. Lasing-induced change in the differential resistance of stripe geometry Ga1-xAlxAs DH lasers[J]. J. Appl. Phys.,1979,18(2):331-341
[14] J. Diaz,I. Eliashevich,H. Yi et al.. Theoretical investigation of minority carrier leakages of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes[J]. Appl. Phys. Lett.,1994,65(18):2260-2262