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    Journals >Journal of Semiconductors >Volume 40 >Issue 1 >Page 010101 > Article
    • Journal of Semiconductors
    • Vol. 40, Issue 1, 010101 (2019)
    Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices
    Xutang Tao1, Jiandong Ye2, Shibing Long3, and Zhitai Jia4
    Author Affiliations
  • 1Shandong University, Jinan, 250100, China
  • 2Nanjing University, Nanjing, 210023, China
  • 3University of Science and Technology of China, Hefei, 230026, China
  • 4Shandong University, Jinan, 250100, China
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    DOI: 10.1088/1674-4926/40/1/010101 Cite this Article
    Xutang Tao, Jiandong Ye, Shibing Long, Zhitai Jia. Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices[J]. Journal of Semiconductors, 2019, 40(1): 010101 Copy Citation Text show less
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    Xutang Tao, Jiandong Ye, Shibing Long, Zhitai Jia. Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices[J]. Journal of Semiconductors, 2019, 40(1): 010101
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