• Acta Optica Sinica
  • Vol. 24, Issue 3, 289 (2004)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Calculation of Electron Residual Energy in an Intense Laser Field[J]. Acta Optica Sinica, 2004, 24(3): 289 Copy Citation Text show less

    Abstract

    In order to obtain high gain X-ray laser based on the optical field ionization (OFI) induced plasmas, the electron temperature in OFI plasma must be controlled. The dependence of the electron residual energy on laser parameters such as polarization, wavelength (frequency), laser intensity and media ionization potential is calculated quantitatively using quasistatic tunneling ionization model. According to the calculated results it is noted that the electron residual energy is lower either the short-wavelength laser with linear polarization or the medium with high ionization potential is used, thus it is suitable for recombinational mechanism; the residual energy is highest when the polarization α is at some value of 0~1, thus the value of polarization α can be tuned and some elliptical polarized laser can be obtained, which may be in favor of the realization of electron-collisional X-ray laser. So higher gain values can be got.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Calculation of Electron Residual Energy in an Intense Laser Field[J]. Acta Optica Sinica, 2004, 24(3): 289
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