• Acta Optica Sinica
  • Vol. 23, Issue 4, 455 (2003)
[in Chinese] and [in Chinese]*
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  • [in Chinese]
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    [in Chinese], [in Chinese]. Characteristics and Analysis of Laser Diode End-Pumped Cr4+: Nd3+: YAG Microchip Laser[J]. Acta Optica Sinica, 2003, 23(4): 455 Copy Citation Text show less
    References

    [1] Zhou Shouhuan, Lee K K, Chen Y C. Monolithic self-Q-switched Cr: Nd: YAG laser. Opt. Lett., 1993, 18(2):511~512

    [2] Li Shiqun, Zhou Shouhuan, Wang Pei et al.. Self-Q-switched diode-end pumped Cr: Nd: YAG Laser with polarized output. Opt. Lett., 1993, 18(3):203~204

    [3] Laporta, Design criteria for mode size optimization in diode-pumped solid-state lasers. IEEE J. Quant. Electron., 1991, 27(10):2391~2326

    [4] Zhang Xingyu, Zhao Shengzhi, Wang Qingpu et al.. Optimization of Cr4+ doped saturable absorber Q-switched lasers. IEEE J. Quant. Electron., 1997, 33(12):2286~2294

    [5] Degnan J J. Optimization of passively Q-switched laser. IEEE J. Quant. Electron., 1995, 31(11):1890~1901

    CLP Journals

    [1] Yonggang Wang, Xiaoyu Ma, Bin Zhong, Desong Wang, Qiulin Zhang, Baohua Feng. Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs[J]. Chinese Optics Letters, 2004, 2(1): 0131

    [2] Deng Ben, Wang Jie, Jiang Peipei, Wu Bo, Shen Yonghang. High Peak Power Microchip Laser and its LIBS Application[J]. Chinese Journal of Lasers, 2014, 41(11): 1102005

    [in Chinese], [in Chinese]. Characteristics and Analysis of Laser Diode End-Pumped Cr4+: Nd3+: YAG Microchip Laser[J]. Acta Optica Sinica, 2003, 23(4): 455
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