• Journal of Semiconductors
  • Vol. 40, Issue 5, 052501 (2019)
Zhifeng Yu1、2, Hailong Wang1、2, Jialin Ma1、2, Shucheng Tong1、2, and Jianhua Zhao1、2
Author Affiliations
  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
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    DOI: 10.1088/1674-4926/40/5/052501 Cite this Article
    Zhifeng Yu, Hailong Wang, Jialin Ma, Shucheng Tong, Jianhua Zhao. Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)[J]. Journal of Semiconductors, 2019, 40(5): 052501 Copy Citation Text show less
    (Color online) (a) T dependence of the zero-field ρxx varying from 5 to 300 K. The fitting curves using activation model in different T regions are plotted in red, blue and green lines, respectively. The inset gives a linear relation between ln(Δσxx) and 1/T in the corresponding T ranges. (b) The MR at several selected temperatures. The inset shows the temperature dependence of MR at specific applied field.
    Fig. 1. (Color online) (a) T dependence of the zero-field ρxx varying from 5 to 300 K. The fitting curves using activation model in different T regions are plotted in red, blue and green lines, respectively. The inset gives a linear relation between ln(Δσxx) and 1/T in the corresponding T ranges. (b) The MR at several selected temperatures. The inset shows the temperature dependence of MR at specific applied field.
    (Color online) T dependence of M varying from 5 to 280 K. (a) The fitting curves using T2, T3/2 and exponential dependences in different T regions are plotted in red, blue and green lines, respectively. The formulas describing M(T) in corresponding T regions are shown. (b) The linear relations of ln(1–M(T)2/M(0)2) (red line) and ln(1–M(T)/M(0)) (blue line) versus T.
    Fig. 2. (Color online) T dependence of M varying from 5 to 280 K. (a) The fitting curves using T2, T3/2 and exponential dependences in different T regions are plotted in red, blue and green lines, respectively. The formulas describing M(T) in corresponding T regions are shown. (b) The linear relations of ln(1–M(T)2/M(0)2) (red line) and ln(1–M(T)/M(0)) (blue line) versus T.
    (Color online) (a) ρxy(H) varying with H and T after the subtraction of the background signals originated from ρxx. The inset shows the hysteresis loop at 5 K perpendicular and parallel to the film plane. (b) The relation between ρAH and ρxx2. The slope value is estimated to be about 55 Ω–1cm–1.
    Fig. 3. (Color online) (a) ρxy(H) varying with H and T after the subtraction of the background signals originated from ρxx. The inset shows the hysteresis loop at 5 K perpendicular and parallel to the film plane. (b) The relation between ρAH and ρxx2. The slope value is estimated to be about 55 Ω–1cm–1.
    Zhifeng Yu, Hailong Wang, Jialin Ma, Shucheng Tong, Jianhua Zhao. Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)[J]. Journal of Semiconductors, 2019, 40(5): 052501
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