Research Progress of Green Lasers Based on Quasi-Phase-Matched Intracavity Frequency Doubling in PPMgLN

Hongyi Lin; Mingyu Wu; Dong Sun; Jie Tang; Jianjian Ruan

doi:10.3788/LOP56.190004

Journals >Laser & Optoelectronics Progress >Volume 56 >Issue 19 >Page 190004 > Article

Laser & Optoelectronics Progress
Vol. 56, Issue 19, 190004 (2019)

Research Progress of Green Lasers Based on Quasi-Phase-Matched Intracavity Frequency Doubling in PPMgLN

Hongyi Lin^*, Mingyu Wu, Dong Sun, Jie Tang, and Jianjian Ruan

Author Affiliations

School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China

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DOI: 10.3788/LOP56.190004 Cite this Article Set citation alerts

Hongyi Lin, Mingyu Wu, Dong Sun, Jie Tang, Jianjian Ruan. Research Progress of Green Lasers Based on Quasi-Phase-Matched Intracavity Frequency Doubling in PPMgLN[J]. Laser & Optoelectronics Progress, 2019, 56(19): 190004 Copy Citation Text

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Intracavity frequency doubling 534.7 nm laser based on electrically pumped vertical external-cavity surface-emitting semiconductor laser[7]

Fig. 1. Intracavity frequency doubling 534.7 nm laser based on electrically pumped vertical external-cavity surface-emitting semiconductor laser[7]

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Fig. 2. Intracavity frequency doubling 530 nm green laser based on optically pumped semiconductor chip laser[11]

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Fig. 3. Diagram of all-solid-state intracavity frequency doubled green laser [15,17]

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Fig. 4. Diagrams of array green laser pumped by multiple luminous points[29]. (a) Top view of array green laser; (b) side view of array green laser

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Fig. 5. Green module of Spectralus microship[35]. (a) Nd∶YVO4/PPMgLN bonding crystal; (b) output light spot; (c) green laser package

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Fig. 6. Schematic and physical drawings of optical-contact green module[38]. (a) Schematic drawing of optical-contact green module; (b) physical drawing of optical-contact green module

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Fig. 7. Schematic and physical drawings of M-green module[41]

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Fig. 8. Diagram of multi-beam M-green laser[43]

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Year	Research institute	LD cavity	Gain medium	PPMgLN	Output parameters
2004^[6]	Novalux, USA	Electricallypumped VECSEL	GaAs	PPLN	30 mW, single-frequency,M²<1.2,stability 0.5%
2009^[7]	University ofGlamorgan, UK	Electrically pumped VECSELA 49-edge-emitter laser bar	Oclaro	10 mm,6.92 μm	534.7 nm, 1.31 W,EO 1.5%, OO 3.1%
2010^[8]	University ofGlamorgan, UK	Electrically pumped VECSELA 49-edge-emitter laser bar	Oclaro	10 mm,6.92 μm	534.2 nm, 1.2 W,temperature bandwidth 1 ℃
2014^[9]	PrincetonOptronics,Inc., USA	Electricallypumped VECSEL	InGaAs/GaAs	7 mm,6.94 μm	531 nm, 4.74 W, EO 18.3%,M²≈13, stability ±1.4%
2015^[10]	PrincetonOptronics,Inc., USA	Electricallypumped VECSEL	InGaAs/GaAs	7 mm,6.94 μm	532 nm, 3.34 W,EO 21.2%, M² ≈ 13
2011^[11]	OSRAM,Germany	Opticallypumped VECSEL	VECSEL chip	1 mm	530 nm, 150 mW,5-10 mrad, EO 18%,M²≈1, single-frequency
2008^[12]	OSRAM,Germany	Optically pumpedsemiconductor disk lasers	OPS chip	1.2 mm	530 nm, 80 mW,<10 mrad, EO 7%, M²≈1,single-frequency

Table 1. Output parameters of intracavity frequency doubled semiconductor lasers (OO: optical-to-optical conversion efficiency; EO: electro-optical conversion efficiency)

Year	Research institute	PPMgLN, gain crystal	Cavity	Output parameters
2008^[13]	Matsushita Electric IndustrialCo., Ltd., Japan	0.5 mm, 7 μmNd∶YVO₄	Straight	0.7 W, OO 30%, EO 11.8%,operation temperature range 30 ℃
2008^[14]	Matsushita Electric IndustrialCo., Ltd., Japan	0.5 mm, 7 μmNd∶YVO₄	Straight	1.7 W, OO 39.2%, EO 18.9%,operation temperature range 46 ℃
2008^[15]	Chinese Academyof Sciences	10 mm Nd∶YVO₄	Straight	908 mW, OO 33.5%, stability2.5%, temperature bandwidth ≈10 ℃
2009^[16]	Chinese Academyof Sciences	3 mm, 6.9 μmNd∶YVO₄	V-shaped	6.67 W, OO 33.35%,stability 3%
2010^[17]	Chinese Academyof Sciences	2 mm, 6.93 μmNd∶YVO₄	Straight	1.56 W, OO 52%,temperature bandwidth 15 ℃
2010^[17]	Chinese Academyof Sciences	1 mm, 6.93 μmNd∶YVO₄	Straight	1.52 W, OO 50.7%,temperature bandwidth 12 ℃
2011^[18]	Qingdao University	12 mm, 6.95 μmNd∶YVO₄	Straight	1.2 W, OO 30%,peak power 910 W
2011^[19]	McMaster University,Canada	2 mm, 7 μmNd∶YVO₄	Straight	1.02 W, OO 37.2%,stability 4%
2011^[20]	McMaster University,Canada	1 mm Nd∶YVO₄	Straight	1.1 W, OO 37.3%, EO >19%,1.2 temperature tolerance > 30 ℃
2011^[21]	Chinese Academyof Sciences	1 mm, 6.95 μmNd∶YVO₄	Straight	3.8 W, OO 56%,stability 2.5%
2012^[22]	Xiamen University	2.5 mm, 7 μmNd∶YVO₄	Straight	6.2 W, OO 43%,stability 5%
2012^[23]	Nanjing University	4.8 mm, 6.76 μmNd∶GdVO₄	Z-shaped	531.5 nm, 2.4 W, OO 16%, stability5%, temperature bandwidth 7 ℃
2014^[24]	Chinese Academyof Sciences	1 mm, 6.96 μmNd∶YVO₄	Straight	1.84 W, OO 51%,stability 1%
2014^[25]	Chinese Academyof Sciences	2 mm, 6.96 μmNd∶YVO₄	Straight	5.6 W, OO 51%, stability 5%,temperature bandwidth 12 ℃
2014^[26]	ShandongUniversity	2 mm, 7.55 μm,Nd∶Mg∶LiTaO₃	V-shaped	546 nm, 102 mW, OO 2.3%
2014^[26]	ShandongUniversity	7.55, 7.38, 7.22 μm and2 mm, Nd∶Mg∶LiTaO₃	V-shaped	546, 542, 538 nm,62.8 mW, OO 1.4%
2015^[27]	Nanjing University ofInformation Science & Technology	PPLN, 1.3 mm,7 μm Nd∶YVO₄	Straight	1.343 W, OO 32.8%,stability 2%
2018^[28]	Shandong NormalUniversity	5 mm, 6.92 μmYb∶LYSO	Z-shaped	529 nm, 90 mW,stability 5%

Table 2. Output parameters of intracavity frequency doubled all-solid-state lasers

Year	Research institute	LD	PPMgLN	Output parameters
2008^[29]	Mitsubishi ElectricCorporation, Japan	15 arrayed LD	Planar-waveguide4 mm	Average power 7.6 W, peakpower 10.9 W, OO 40%, EO 20%
2009^[30]	Mitsubishi ElectricCorporation, Japan	15 arrayed LD	Planar-waveguide4 mm	CW 10.8 W,OO 40%, EO 20%
2009^[30]	Mitsubishi ElectricCorporation, Japan	15 arrayed LD	Planar-waveguide4 mm	pulse: peak power 11.4 W,average power 3.8 W, OO 42%
2009^[31]	Mitsubishi ElectricCorporation, Japan	15 arrayed LD	Planar-waveguide4 mm	CW 10.8 W, OO 40%, EO 20%,temperature bandwidth 40 ℃
2016^[32]	Chinese Academyof Sciences	19 arrayed LD	2 mm, 6.95 μm	3.12 W, OO 9.2%

Table 3. Output parameters of Nd∶YVO4/PPMgLN laser pumped by multi-point LD array

Year	Research institute	Module	Output parameters
2009-2011^[33-36]	Spectralus Corporation, USA	Monolithic cavity	250 mW, stability 5%, OO 30%, EO >10%
2010^[37]	McMaser University, Canada	Optical-contact	Average power 450 mW, peak power541.5 mW, OO 33.5%, EO 16.25%
2013^[38]	Chinese Academy of Sciences	Optical-contact	295 mW, OO 25.5%, stability 2.5%
2016^[39]	Yunnan Normal University	Optical-contact	2 arrayed LD, 200 mW, OO 21.7%
2017^[40]	Chinese Academy of Sciences	Optical-contact	3 arrayed LD, 223.7 mW, stability ±2.5%
2012^[41]	McMaser University, Canada	M-green	1.02 W (4 W 808 pump), OO 25.5%
2012^[42]	McMaser University, Canada	M-green	1.15 W (3 W 808 pump) , OO 38.5%
2013^[43]	McMaser University, Canada	M-green	6-beam array,6.47 W, OO 29.9%
2013^[44]	McMaser University, Canada	M-green	1.28 W (4.4 W 808 pump), OO 29.1%
2018^[45]	McMaser University, Canada	M-green	2.9 W, OO >40%

Table 4. Output parameters of green lasers with Nd∶YVO4/PPMgLN modules

Year	Researchinstitute	PPLN	Pulsemode	Average outputpower	Pulsewidth	RepetitionRate	Peakpower
2011^[46]	Qingdao University	12 mm,6.95 μm	Cr∶YAG,Q-switched	765 mW	12 ns	70 kHz	910 W
2017^[47]	Nanjing University ofInformation Science & Technology	1.2 mm	MoS₂,Q-switched	323 mW	320 ns	66.7 kHz	15 W
2018^[48]	Nanjing University ofInformation Science & Technology	1.3 mm,7 μm	Graphene oxide,Q-switched	536 mW	98 ns	71.4 kHz	76.6 W
2018^[49]	Nanjing University ofInformation Science & Technology	1.2 mm,7 μm	MoS₂,mode-locked	757 mW	3.5ps	87.2 MHz	2.49 kW

Table 5. Outputparameters of pulsed green lasers

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