• Laser & Optoelectronics Progress
  • Vol. 50, Issue 10, 100006 (2013)
Shen Xiaoxia1、*, Dong Guoyan2, Ren Yazhou1, Wang Xinzhong1, and Zhou Zhiwen1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop50.100006 Cite this Article Set citation alerts
    Shen Xiaoxia, Dong Guoyan, Ren Yazhou, Wang Xinzhong, Zhou Zhiwen. Light Extraction Enhancement of Photonic Crystal LEDs with Complex Technology[J]. Laser & Optoelectronics Progress, 2013, 50(10): 100006 Copy Citation Text show less
    References

    [1] C-C Liu, Y-H Chen, M-P Houng, et al.. Improved light-output power of GaN LEDs by selective region activation [J]. IEEE Photon Technol Lett, 2004, 16(6): 1444-1446.

    [2] T Nishida, H Saito, N Kobayashi. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN [J]. Appl Phys Lett, 2001, 79(6): 711-712.

    [3] T Fujii, Y Gao, R Sharma, et al.. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J]. Appl Phys Lett, 2004, 84(6): 855-857.

    [4] H S Venugopalan, X Gao, T Zhang, et al.. Fabrication of high-lumen InGaN flap chip LEDs [C]. SPIE, 2004, 5187: 260-266.

    [5] S Schad, M Scherer, M Seyboth, et al.. Extraction efficiency of GaN-based LEDs [J]. Phys Stat Sol (A), 2001, 188(1): 127-130.

    [6] Y J Lee, T C Lu, H C Kuo, et al.. High brightness AlGalnP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector [J]. Semicond Sci Technol, 2006, 21(2): 184-189.

    [7] Hongwei Liu, Qiang Kan, Chunxia Wang, et al.. Light extraction of GaN LEDs with 2-D photonic crystal structure [J]. Chin Opt Lett, 2009, 7(10): 918-920.

    [8] L Chen, A Nurmikko. Fabrication and performance of efficient blue light emitting III-nitride photonic crystals [J]. Appl Phys Lett, 2004, 85(17): 3663-3665.

    [9] D H Kim, C O Cho, Y G Roh, et al.. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns [J]. Appl Phys Lett, 2005, 87(20): 203508.

    [10] C H Chao, S L Chuang, T-L Wu. Theoretical demonstration of enhancement of light extraction of flip-chip GaN light-emitting diodes with photonic crystals [J]. Appl Phys Lett, 2006, 89(9): 091116.

    [11] Z Xu, L Cao, Q Tan. Enhancement of the light output of light-emitting diode with double photonic crystals [J]. Opt Commun, 2007, 278(1): 211-214.

    [12] A J Danner, B Wang, S-J Chua, et al.. Fabrication of efficient light-emitting diodes with a self-assembled photonic crystal array of polystyrene nanoparticles [J]. IEEE Photon Technol Lett, 2008, 20(1-4): 48-50.

    [13] E Matioli. Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs [J]. J Phys D: Appl Phys, 2010, 43(35): 354005.

    [14] C H Lin, C F Lai, T S Ko, et al.. Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector [J]. IEEE Photon Technol Lett, 2006, 18(19): 2050-2052.

    [15] C H Lin. Enhanced vertical extraction efficiency from a thin film InGaN-GaN light emitting diode using a 2D photonic crystal and an omni-directional reflector [J]. IEEE Photon Technol Lett, 2008, 20(10): 836-839.

    [16] Xu Qingtao, Li Kang, Kong Fanmin, et al.. Enhancing extraction efficiency from GaN-based LED by using an omni-directional reflector and photonic crystal [J]. Optoelectronics Lett, 2009, 5(6): 405-408.

    [17] Kyeong-Jae Byeon, Joong-Yeon Cho. Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography [J]. Opt Express, 2012, 20(10): 11423-11432.

    [18] Zhou Shizhong, Lin Zhiting, Wang Haiyan. Research progress of patterned sapphire substrate for GaN-based light-emitting diodes [J]. Semiconductor Technology, 2012, 37(6): 417-424.

    [19] Lee K S, Kwack H S, Hwang J S, et al.. Spatial correlation between optical properties and defect formation in GaN thin films laterally overgrown on cone-shaped patterned sapphire substrates [J]. J Appl Phys, 2010, 107(10): 103506.

    [20] K Tadatomo, H Okagawa, Y Ohuchi. High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy [J]. Jpn J Appl Phys: Part 2-Letters, 2001, 40(6B): 583-585.

    [21] Ee Y K, Li X H, Biser J. Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire[J]. J Cryst Growth, 2010, 312(8): 1311-1315.

    [22] Su Y K, Chen J J, Lin C L, et al.. Structural analysis of nitride-based LEDs grown on micro-and nanoscale patterned sapphire substrates[J]. Phys Stat Sol (C), 2010, 7(7/8): 1784-1786.

    [23] H Y Lin, Y J Chen, C C Chang, et al.. Pattern-coverage effect on light extraction efficiency of GaN LED on patterned-sapphire substrate [J]. Electrochem Solid-State Lett, 2012, 15(3): H72-H74.

    [24] Y Li, S You, M Zhu, et al.. Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire [J]. Appl Phys Lett, 2011, 98(15): 151102.

    [25] W Cao, J M Biser, Y-K Ee, et al.. Dislocation structure of GaN films grown on planar and nanopatterned sapphire [J]. J Appl Phys, 2011, 110(5): 053505.

    [26] Y D Wang, K Y Zang, S J Chua, et al.. Improvement of microstructural and optical properties of GaN layer on sapphire by nano scale lateral epitaxial overgrowth [J]. Appl Phys Lett, 2006, 88(21): 211908.

    [27] M T Wang, K Y Liao, Y L Li. Growth mechanism and strain variation of GaN material grown on patterned sapphire substrates with various pattern design [J]. IEEE Photon Technol Lett, 2011, 23(14): 962-964.

    [28] Gao Hui, Kong Fan-Min, Li Kang, et al.. Structural optimization of GaN blue light LED with double layers of photonic crystals [J]. Acta Physica Sinica, 2012, 61(12): 127807.

    [29] Hui Gao, Kang Li. Improving light extraction efficiency of GaN-based LEDs by AlxGa1-xN confining layer and embedded photonic crystals [J]. IEEE J Sel Top Quantum Electron, 2012, 18(6): 1650-1660.

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    Shen Xiaoxia, Dong Guoyan, Ren Yazhou, Wang Xinzhong, Zhou Zhiwen. Light Extraction Enhancement of Photonic Crystal LEDs with Complex Technology[J]. Laser & Optoelectronics Progress, 2013, 50(10): 100006
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