• Semiconductor Optoelectronics
  • Vol. 45, Issue 5, 687 (2024)
LI Ming1, FU Jing2, JIANG Junxian1, LIU Geyang1, and NI Piao1
Author Affiliations
  • 1Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
  • 2National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 400000, CHN
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    DOI: 10.16818/j.issn1001-5868.2024042805 Cite this Article
    LI Ming, FU Jing, JIANG Junxian, LIU Geyang, NI Piao. Design of Monolithic Integrated High-Response Photodetection Device[J]. Semiconductor Optoelectronics, 2024, 45(5): 687 Copy Citation Text show less
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    [5] Youn Jin-Sung, Lee Myung-Jae, Park Kang-Yeob, et al. 10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector[J]. IEEE J. Quantum Electron., 2012, 48(2): 229-236.

    [6] Radovanovic S, Annema A J, Nauta B. High-Speed Photodiodes in Standard CMOS Technology[M]. Berlin: Springer Science & Business Media, 2006.