[1] Rogalski A. Infrared detectors: an overview [J]. Infrared Physics﹠ Technology, 2002, 43:187-210.
[2] Norton P. HgCdTe infrared detectors[J]. Opto—Electronics Review, 2003, 10(3): l59-l74.
[3] Sun C H, Zhang P, Zhang T N, et al. ZnS Thin films grown by atomic layer deposition on GaAs and HgCdTe Substrates at very low temperature[J]. Infrared Physics & Technology, 2017, 85: 280-286.
[4] Aoki T, Chang Y, Badano G, et al. Defect characterization for epitaxial HgCdTe alloys by electron microscopy[J]. J ournal of Crystal Growth, 2004, 265: 224-234.
[5] Wang H, Hong J, Yue F, et al. Optical homogeneity analysis of Hg1-xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands [J]. Infrared Physics & Technology, 2017, 82: 1-7.
[6] Hu W D, Ye Z H, Liao L, et al. 128×128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk[J]. Optics Letters, 2014, 39: 5130-5133.
[7] Sheng F F, Zhou C, Sun S, et al. Influences of Te-Rich and Cd-Rich precipitates of CdZnTe substrates on the surface defects of HgCdTe liquid-phase epitaxy materials[J]. Journal of Electronic Materials, 2014, 43(5): 1397-1402.
[8] Yoshikawa M. Dislocation in Hg1-xCdxTe/Cd1-zZnzTe epilayers grown by Liquid-Phase Epitaxy[J]. Journal of Applied physics 1988, 63(5): 1533-1540.
[9] Johnson S M, Rhiger D R, Rosbeck J P, et al. Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors[J]. J. Vac. Sci. Technol. 1992,10(4), 1499-1506.
[10] D’Souza A I, Bajaj J, De WamesR E, et al. MWIR DLPH HgCdTe photodiode performance dependence on substrate material[J]. Journal of Electronic Material, 1998, 27(6): 727-732.
[11] Li Q, He J L, Hu W D, et al. Influencing sources for dark current transport and avalanche mechanisms in planar and mesa HgCdTe pin electron-avalanche photodiodes[J]. IEEE Transactions on Electron Devices. 2018, 865: 572-576.
[12] Wang P, He J L, Xu J, et al. Parameters extraction from the dark current characteristics of mid-wavelength HgCdTe photodiode after annealing. Journal of Infrared and Millimeter Waves, 2017, 36(3): 289-294 .
[13] Starr B, Mears L, Fulk C, et al. RVS WFIRST sensor chip assembly development results[J]. Proc. of SPIE, 2016, 9915: 99150Q1-99150Q11.
[14] List R S. Electrical effects of dislocations and other crystallographic defects in Hg0.78Cd0.22Te n-on-p photodiodes[J]. Journal of Electronic Materials, 1993, 22(8):1017-1025.
[15] Zandian M, Scott D, Garnett J, et al. Ten-inch molecular beam epitaxy production system for HgCdTe growth[J]. Journal of Electronic Materials, 2005, 34:891-907.
[16] Sen S, Liang C S, Rhiger D R, et al. Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality[J]. Journal of Electronic Materials, 1996, 25(8):1188-1195.
[17] Price S L, Hettich H L, Sen S, et al. Progress in CdZnTe substrate producibility and critical drivers of IRFPA yield originating with CdZnTe substrates[J]. Journal of Electronic Materials, 1998, 27(6):564 -572.
[18] Belas E, Bugár M, Grill R, et al. Reduction of inclusions in (CdZn)Te and CdTe: In single crystals by post-growth annealing[J]. Journal of Electronic materials, 2008, 37(9):1212-1218.