• Microelectronics
  • Vol. 52, Issue 4, 706 (2022)
HUANG Keyue1, WU Zhonghua2, ZHOU Miao3, CHEN Weizhong1, WANG Zhao2, and ZHOU Xin2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220211 Cite this Article
    HUANG Keyue, WU Zhonghua, ZHOU Miao, CHEN Weizhong, WANG Zhao, ZHOU Xin. Study on Total-Ionizing-Dose Radiation Induced BV Degradation of High Voltage SOI pLDMOS[J]. Microelectronics, 2022, 52(4): 706 Copy Citation Text show less
    References

    [1] SHEA P M, SHEN Z J. Numerical and experimental investigation of single event effects in SOI lateral power MOSFETs [J]. IEEE Trans Nucl Sci, 2011, 58(6): 2739-2747.

    [3] DODD P E, SHANEYFELT M R, DRAPER B L, et al., Development of a radiation-hardened lateral power MOSFET for POL applications [J]. IEEE Trans Nucl Sci, 2009, 56(6): 3456-3462.

    [4] BARNABY H J. Total-ionizing-dose effects in modern CMOS technologies [J]. IEEE Trans Nucl Sci, 2006, 53(6): 3103-3121.

    [5] OLDHAM T R, MCLEAN F B. Total ionizing dose effects in MOS oxides and devices [J]. IEEE Trans Nucl Sci, 2003, 55(3): 483-499

    [6] WANG Z J, CHENG X H, XIAO C, et al. Total ionizing dose effects in high breakdown voltage SOI devices [C]// 20th Int Conf IIT. Portland, OK, USA. 2014: 1-4.

    [7] ALLES M L, HUGHES H, DENNIS R B.Total-ionizing-dose response of narrow, long channel 45 nm PDSOI transistors [J]. IEEE Trans Nucl Sci, 2014, 61(6): 2945-2950.

    [10] ZHOU X, YUAN Z Y A, SHU L, et al. Total-ionizing-dose irradiation-induced dielectric field enhancement for high-voltage SOI LDMOS [J]. IEEE Elec Dev Lett, 2019, 40(4): 593-596.

    [12] ZHOU X, ZHANG L F, QIAO M, et al. Investigation on total-ionizing-dose radiation response for high voltage ultra-thin layer SOI LDMOS [C]// IEEE Int Symp Power Semicond Dev & IC. Chicago, IL, USA. 2018: 64-67.

    [13] Taurus medici user guide version Q-2019.12 [Z]. 2019.

    HUANG Keyue, WU Zhonghua, ZHOU Miao, CHEN Weizhong, WANG Zhao, ZHOU Xin. Study on Total-Ionizing-Dose Radiation Induced BV Degradation of High Voltage SOI pLDMOS[J]. Microelectronics, 2022, 52(4): 706
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