• Microelectronics
  • Vol. 52, Issue 4, 706 (2022)
HUANG Keyue1, WU Zhonghua2, ZHOU Miao3, CHEN Weizhong1, WANG Zhao2, and ZHOU Xin2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.220211 Cite this Article
    HUANG Keyue, WU Zhonghua, ZHOU Miao, CHEN Weizhong, WANG Zhao, ZHOU Xin. Study on Total-Ionizing-Dose Radiation Induced BV Degradation of High Voltage SOI pLDMOS[J]. Microelectronics, 2022, 52(4): 706 Copy Citation Text show less

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