High-Average-Power Self-Mode-Locked Ti:Sapphire Laser Self-Started by a Semiconductor Saturable Absorber Mirror

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 21 >Issue 8 >Page 1019 > Article

Acta Optica Sinica
Vol. 21, Issue 8, 1019 (2001)

High-Average-Power Self-Mode-Locked Ti:Sapphire Laser Self-Started by a Semiconductor Saturable Absorber Mirror

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-Average-Power Self-Mode-Locked Ti:Sapphire Laser Self-Started by a Semiconductor Saturable Absorber Mirror[J]. Acta Optica Sinica, 2001, 21(8): 1019 Copy Citation Text

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Abstract

A novel high power self starting mode locked Ti∶sapphire laser with a semiconductor saturable absorber mirror (SESAM) as self starting element is demonstrated. Its sloping efficiency is 22%, average power as high as 1.7 W and pulse width shorter than 16 fs. The starting dynamical process of the laser has been studied. This kind of laser will have a wide applications.

Keywords

self starting semiconductor saturable absorber mirror high power femotosecond laser

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