Enhanced spin Hall effect of reflected light with guided-wave surface plasmon resonance

Yuanjiang Xiang; Xing Jiang; Qi You; Jun Guo; Xiaoyu Dai

doi:10.1364/PRJ.5.000467

Journals >Photonics Research >Volume 5 >Issue 5 >Page 467 > Article

Photonics Research
Vol. 5, Issue 5, 467 (2017)

Enhanced spin Hall effect of reflected light with guided-wave surface plasmon resonance

Yuanjiang Xiang, Xing Jiang, Qi You, Jun Guo, and Xiaoyu Dai^*

Author Affiliations

SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

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DOI: 10.1364/PRJ.5.000467 Cite this Article Set citation alerts

Yuanjiang Xiang, Xing Jiang, Qi You, Jun Guo, Xiaoyu Dai. Enhanced spin Hall effect of reflected light with guided-wave surface plasmon resonance[J]. Photonics Research, 2017, 5(5): 467 Copy Citation Text

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Schematic of the photonic SHE of a beam upon reflection of a GWSPR configuration. δ+ and δ− indicate the transverse displacements for left- and right-circular polarization components, respectively.

Fig. 1. Schematic of the photonic SHE of a beam upon reflection of a GWSPR configuration. δ+ and δ− indicate the transverse displacements for left- and right-circular polarization components, respectively.

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Dependences of transverse beam shifts on the metal film thickness and the incident angle with d3=0: (a) H-polarization state; (b) V-polarization state.

Fig. 2. Dependences of transverse beam shifts on the metal film thickness and the incident angle with d3=0: (a) H-polarization state; (b) V-polarization state.

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Fig. 3. Dependences of the Fresnel reflectance Rs and Rp on the incident angle with the different thickness of silicon, where the silicon film thickness (dsi=d3) is fixed to the three values: 0, 8, and 12 nm, when d2=46 nm.

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Fig. 4. (a) Relation of minimum value of rp and incident angle at the minimum value of rp with the thickness of the Si film. (b) Value of |rs/rp| changing with the incident angles under the Si film thickness are fixed to four values: 8, 10, 12, and 14 nm, where d2=46 nm.

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Fig. 5. Photonic SHE in GWSPR model for H- and V-polarization state; we show the spin-dependent splitting varying with the incident angles under d2=46 nm. Here, we choose three different thicknesses: (a) 0 nm; (b) 8 nm; (c) and the optimal thickness 12 nm.

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Fig. 6. Dependence of the displacements (a) H-polarization state and (b) V-polarization state on the incident angle and the thickness of Si.

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Yuanjiang Xiang, Xing Jiang, Qi You, Jun Guo, Xiaoyu Dai. Enhanced spin Hall effect of reflected light with guided-wave surface plasmon resonance[J]. Photonics Research, 2017, 5(5): 467

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