[1] Kruse P W. Solid-state infrared-wavelength converter employing high-quantum-efficiency Ge-GaAs heterojunction[J]. Journal of Applied Physics, 1967, 38(4): 1718.
[2] Liu H C, Li J, Wasilewski Z R, et al. Integrated quantum-well intersub-band photodetector and light-emitting diode[J]. Electronics Letters, 1995, 31(10): 832-833.
[3] Ban D, Luo H, Liu H C, et al. Midinfrared optical upconverter[J]. Applied Physics Letters, 2005, 86(20): 201103.
[4] Cheng Liqun, Zheng Huandong, Zhang Xiyan, et al. Manufacturing of an coupled short wavelength infrared detectorusing infrared upconversionscreens[J]. Infrared and Laser Engineering, 2014, 43(12): 3872-3876. (in Chinese)
[6] Wang L, Hao Z, Luo Y, et al. Semiconductor up-converter based on cascade carrier transport for infrared detection/imaging[J]. Applied Physics Letters, 2015, 107(13): 131107.
[7] Kang Jianbin, Hao Zhibiao, Wang Lei, et al. Studies on carrier-blocking structures for up-conversion infrared photodetectors[J]. Acta Physica Sinica, 2015, 64(17): 178501-178502. (in Chinese)
[8] Giorgetta F R, Baumann E, Theron R, et al. Short wavelength (4 μm) quantum cascade detector based on strain compensated InGaAs/InAlAs[J]. Applied Physics Letters, 2008, 92(12): 121101.
[9] Dai Q, Shan Q, Wang J, et al. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes[J]. Applied Physics Letters, 2010, 97(13): 133507.
[10] Ban D, Luo H, Liu H C, et al. Optimized GaAs/AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices[J]. Journal of Applied Physics, 2004, 96(9): 5243.
[11] Levine B F. Quantum-well infrared photodetectors[J]. Journal of Applied Physics, 1993, 74(8): R1-R81.